NSV40200LT1G
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- Mfr.Part #
- NSV40200LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 2A SOT23-3
- Stock
- 5,880
- In Stock ：
- 5,880
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- -40V
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- Factory Lead Time :
- 8 Weeks
- Height :
- 1.11mm
- Length :
- 3.04mm
- Base Part Number :
- NSS40200
- Max Frequency :
- 100MHz
- Weight :
- 1.437803g
- Max Breakdown Voltage :
- 40V
- Emitter Base Voltage (VEBO) :
- -7V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 170mV @ 200mA, 2A
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Max Power Dissipation :
- 460mW
- Radiation Hardening :
- No
- Max Collector Current :
- 2A
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 500mA 2V
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 40V
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Width :
- 2.64mm
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Transition Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 40V
- Collector Emitter Saturation Voltage :
- -135mV
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 100MHz
- Published :
- 2011
- Terminal Finish :
- Tin (Sn)
- Halogen Free :
- Halogen Free
- Datasheets
- NSV40200LT1G
PNP -55°C~150°C TJ 100nA ICBO PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSV40200LT1G Overview
This device has a DC current gain of 220 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -135mV.A VCE saturation (Max) of 170mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -7V.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 40V volts can be used.A maximum collector current of 2A volts is possible.
NSV40200LT1G Features
the DC current gain for this device is 220 @ 500mA 2V
a collector emitter saturation voltage of -135mV
the vce saturation(Max) is 170mV @ 200mA, 2A
the emitter base voltage is kept at -7V
a transition frequency of 100MHz
NSV40200LT1G Applications
There are a lot of ON Semiconductor
NSV40200LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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