NSS60601MZ4T3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Collector Base Voltage (VCBO) :

100V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

60V

Collector Emitter Breakdown Voltage :

60V

Pin Count :

4

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

300mV @ 600mA, 6A

Number of Terminations :

4

Frequency :

100MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1A 2V

Power Dissipation :

2W

Current - Collector Cutoff (Max) :

100nA ICBO

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

ECCN Code :

EAR99

Terminal Form :

Gull wing

Base Part Number :

NSS60601

Max Collector Current :

6A

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

6V

Surface Mount :

yes

Turn On Time-Max (ton) :

200ns

Power - Max :

800mW

hFE Min :

150

Factory Lead Time :

11 Weeks

Pbfree Code :

yes

Lead Free :

Lead Free

Gain Bandwidth Product :

100MHz

Package / Case :

TO-261-4, TO-261AA

Published :

2007

Case Connection :

COLLECTOR

Number of Elements :

1

Terminal Position :

Dual

Polarity/Channel Type :

NPN

Transistor Type :

NPN

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Halogen Free :

Halogen Free

Number of Pins :

4

Transition Frequency :

100MHz

Max Power Dissipation :

2W