NSS60600MZ4T3G

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Mfr.Part #
NSS60600MZ4T3G
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 60V 6A SOT223
Stock
6,277
In Stock :
6,277

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Elements :
1
Halogen Free :
Halogen Free
JESD-609 Code :
e3
Frequency :
100MHz
Polarity/Channel Type :
PNP
Lead Free :
Lead Free
Collector Emitter Voltage (VCEO) :
60V
Package / Case :
TO-261-4, TO-261AA
Terminal Form :
Gull wing
Mounting Type :
Surface Mount
Max Power Dissipation :
2W
Collector Base Voltage (VCBO) :
100V
Transistor Element Material :
SILICON
Lifecycle Status :
ACTIVE (Last Updated: 16 hours ago)
Element Configuration :
Single
Factory Lead Time :
11 Weeks
Number of Pins :
4
Max Collector Current :
6A
Published :
2007
Power Dissipation :
2W
Gain Bandwidth Product :
100MHz
Number of Terminations :
4
Surface Mount :
yes
Pin Count :
4
Operating Temperature :
-55°C~150°C TJ
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 1A 2V
Emitter Base Voltage (VEBO) :
6V
Transistor Type :
PNP
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
Turn Off Time-Max (toff) :
685ns
Transition Frequency :
100MHz
Terminal Finish :
Tin (Sn)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Breakdown Voltage :
60V
hFE Min :
150
Terminal Position :
Dual
Vce Saturation (Max) @ Ib, Ic :
350mV @ 600mA, 6A
Power - Max :
800mW
Turn On Time-Max (ton) :
280ns
ECCN Code :
EAR99
Current - Collector Cutoff (Max) :
100nA ICBO
Packaging :
Tape and Reel (TR)
Radiation Hardening :
No
Case Connection :
COLLECTOR
Transistor Application :
SWITCHING
Base Part Number :
NSS60600
Datasheets
NSS60600MZ4T3G
Introducing Transistors - Bipolar (BJT) - Single onsemi NSS60600MZ4T3G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-261-4, TO-261AA, Mounting Type:Surface Mount, Number of Pins:4, Number of Terminations:4, Operating Temperature:-55°C~150°C TJ, Base Part Number:NSS60600, NSS60600MZ4T3G pinout, NSS60600MZ4T3G datasheet PDF, NSS60600MZ4T3G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NSS60600MZ4T3G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSS60600MZ4T3G


PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

NSS60600MZ4T3G Overview


In this device, the DC current gain is 120 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 600mA, 6A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.100MHz is present in the transition frequency.Maximum collector currents can be below 6A volts.

NSS60600MZ4T3G Features


the DC current gain for this device is 120 @ 1A 2V
the vce saturation(Max) is 350mV @ 600mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz


NSS60600MZ4T3G Applications


There are a lot of ON Semiconductor
NSS60600MZ4T3G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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