NSS60600MZ4T3G
- Mfr.Part #
- NSS60600MZ4T3G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 6A SOT223
- Stock
- 6,277
- In Stock :
- 6,277
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Halogen Free :
- Halogen Free
- JESD-609 Code :
- e3
- Frequency :
- 100MHz
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 60V
- Package / Case :
- TO-261-4, TO-261AA
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 2W
- Collector Base Voltage (VCBO) :
- 100V
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 16 hours ago)
- Element Configuration :
- Single
- Factory Lead Time :
- 11 Weeks
- Number of Pins :
- 4
- Max Collector Current :
- 6A
- Published :
- 2007
- Power Dissipation :
- 2W
- Gain Bandwidth Product :
- 100MHz
- Number of Terminations :
- 4
- Surface Mount :
- yes
- Pin Count :
- 4
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1A 2V
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Turn Off Time-Max (toff) :
- 685ns
- Transition Frequency :
- 100MHz
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 60V
- hFE Min :
- 150
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 600mA, 6A
- Power - Max :
- 800mW
- Turn On Time-Max (ton) :
- 280ns
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- Base Part Number :
- NSS60600
- Datasheets
- NSS60600MZ4T3G

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NSS60600MZ4T3G Overview
In this device, the DC current gain is 120 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 600mA, 6A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.100MHz is present in the transition frequency.Maximum collector currents can be below 6A volts.
NSS60600MZ4T3G Features
the DC current gain for this device is 120 @ 1A 2V
the vce saturation(Max) is 350mV @ 600mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
NSS60600MZ4T3G Applications
There are a lot of ON Semiconductor
NSS60600MZ4T3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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