NSS60201LT1G
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- Mfr.Part #
- NSS60201LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 2A SOT23-3
- Stock
- 8,327
- In Stock ：
- 8,327
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 100MHz
- Surface Mount :
- yes
- Max Breakdown Voltage :
- 60V
- Power Dissipation :
- 540mW
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- NSS60201
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 8V
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 8 Weeks
- Halogen Free :
- Halogen Free
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Transition Frequency :
- 100MHz
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Frequency :
- 100MHz
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 140V
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 1A 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2004
- Max Collector Current :
- 2A
- Vce Saturation (Max) @ Ib, Ic :
- 140mV @ 200mA, 2A
- Max Power Dissipation :
- 460mW
- Power - Max :
- 460mW
- hFE Min :
- 160
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 60V
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Datasheets
- NSS60201LT1G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSS60201LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 140mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 8V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 2A volts.
NSS60201LT1G Features
the DC current gain for this device is 150 @ 1A 2V
the vce saturation(Max) is 140mV @ 200mA, 2A
the emitter base voltage is kept at 8V
a transition frequency of 100MHz
NSS60201LT1G Applications
There are a lot of ON Semiconductor
NSS60201LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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