NSCT3906LT3G
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- Mfr.Part #
- NSCT3906LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A SOT23-3
- Stock
- 2,070
- In Stock ：
- 2,070
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package :
- SOT-23-3 (TO-236)
- RoHS Status :
- Non-RoHS Compliant
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Frequency - Transition :
- 250MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Operating Temperature :
- -55°C~150°C TJ
- Power - Max :
- 225mW
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Current - Collector (Ic) (Max) :
- 200mA
- Datasheets
- NSCT3906LT3G
PNP -55°C~150°C TJ TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSCT3906LT3G Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 50mA.Supplier device package SOT-23-3 (TO-236) comes with the product.The device exhibits a collector-emitter breakdown at 40V.
NSCT3906LT3G Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the supplier device package of SOT-23-3 (TO-236)
NSCT3906LT3G Applications
There are a lot of Rochester Electronics, LLC
NSCT3906LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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