NSCT2907ALT1G
- Mfr.Part #
- NSCT2907ALT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A SOT23-3
- Stock
- 41,627
- In Stock :
- 41,627
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- RoHS Status :
- Non-RoHS Compliant
- Frequency - Transition :
- 200MHz
- Packaging :
- Tape and Reel (TR)
- Supplier Device Package :
- SOT-23-3 (TO-236)
- Current - Collector (Ic) (Max) :
- 600mA
- Mounting Type :
- Surface Mount
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Power - Max :
- 225mW
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Datasheets
- NSCT2907ALT1G

PNP -55°C~150°C TJ 10nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSCT2907ALT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.When VCE saturation is 1.6V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Supplier package SOT-23-3 (TO-236) contains the product.The device has a 60V maximal voltage - Collector Emitter Breakdown.
NSCT2907ALT1G Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the supplier device package of SOT-23-3 (TO-236)
NSCT2907ALT1G Applications
There are a lot of Rochester Electronics, LLC
NSCT2907ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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