NSCT2222ALT3G
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- Mfr.Part #
- NSCT2222ALT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SOT23-3
- Stock
- 37,692
- In Stock ：
- 37,692
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Power - Max :
- 225mW
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Frequency - Transition :
- 300MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Current - Collector (Ic) (Max) :
- 600mA
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Mounting Type :
- Surface Mount
- RoHS Status :
- Non-RoHS Compliant
- Supplier Device Package :
- SOT-23-3 (TO-236)
- Datasheets
- NSCT2222ALT3G
NPN -55°C~150°C TJ 10nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSCT2222ALT3G Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Supplier device package SOT-23-3 (TO-236) comes with the product.The device exhibits a collector-emitter breakdown at 40V.
NSCT2222ALT3G Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of SOT-23-3 (TO-236)
NSCT2222ALT3G Applications
There are a lot of Rochester Electronics, LLC
NSCT2222ALT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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