NSBA123JDXV6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Element Configuration :

Dual

Lead Free :

Lead Free

Polarity :

PNP

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Max Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Current Rating :

-100mA

Number of Pins :

6

Mount :

Surface Mount

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 0.047

Base Part Number :

NSBA1*

Pin Count :

6

Qualification Status :

Not Qualified

Max Power Dissipation :

500mW

Factory Lead Time :

17 Weeks

Number of Elements :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Published :

2010

Transistor Type :

2 PNP - Pre-Biased (Dual)

Continuous Collector Current :

-100mA

Min Operating Temperature :

-55°C

hFE Min :

80

Mounting Type :

Surface Mount

Voltage - Rated DC :

-50V

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

50V

Max Operating Temperature :

150°C

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-563, SOT-666

Time@Peak Reflow Temperature-Max (s) :

40

Resistor - Base (R1) :

2.2k Ω

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Resistor - Emitter Base (R2) :

47k Ω

Collector Emitter Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

500nA

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Power Dissipation :

357mW