NSBA123EDXV6T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

hFE Min :

8

Transistor Application :

SWITCHING

Max Operating Temperature :

150°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

8 @ 5mA 10V

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Flat

Transistor Type :

2 PNP - Pre-Biased (Dual)

Current - Collector Cutoff (Max) :

500nA

Peak Reflow Temperature (Cel) :

260

Resistor - Base (R1) :

2.2k Ω

Min Operating Temperature :

-55°C

Power Dissipation :

357mW

Polarity :

PNP

Resistor - Emitter Base (R2) :

2.2k Ω

JESD-609 Code :

e3

Element Configuration :

Dual

Voltage - Rated DC :

-50V

Mount :

Surface Mount

Pin Count :

6

Number of Elements :

2

Packaging :

Tape and Reel (TR)

RoHS Status :

Non-RoHS Compliant

Max Collector Current :

100mA

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

SOT-563, SOT-666

Terminal Finish :

Tin (Sn)

Lead Free :

Contains Lead

Collector Emitter Voltage (VCEO) :

250mV

JESD-30 Code :

R-PDSO-F6

Collector Emitter Breakdown Voltage :

50V

Number of Terminations :

6

Continuous Collector Current :

-100mA

Max Power Dissipation :

500mW

Published :

2009

Current Rating :

-100mA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Mounting Type :

Surface Mount

Base Part Number :

NSBA1*