NSB1706DMW5T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Height :

1mm

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Polarity :

NPN

hFE Min :

80

Resistor - Emitter Base (R2) :

47k Ω

Radiation Hardening :

No

Factory Lead Time :

8 Weeks

Resistor - Base (R1) :

4.7k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Voltage - Rated DC :

50V

Collector Emitter Voltage (VCEO) :

50V

Length :

2.2mm

Max Power Dissipation :

250mW

Power Dissipation :

187mW

JESD-609 Code :

e3

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Pbfree Code :

yes

Emitter Base Voltage (VEBO) :

6V

Collector Emitter Saturation Voltage :

250mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Package / Case :

5-TSSOP, SC-70-5, SOT-353

Collector Emitter Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Additional Feature :

BUILT-IN BIAS RESISTOR

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-55°C

Number of Pins :

5

Current - Collector Cutoff (Max) :

500nA

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2009

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Max Output Current :

100mA

Number of Elements :

2

Width :

1.35mm

Continuous Collector Current :

100mA

Transistor Type :

2 NPN - Pre-Biased (Dual)

Peak Reflow Temperature (Cel) :

260

Max Operating Temperature :

150°C

Max Breakdown Voltage :

50V

Contact Plating :

Tin

Base Part Number :

NSB1706

Collector Base Voltage (VCBO) :

50V

Pin Count :

5

Terminal Form :

Gull wing

Operating Supply Voltage :

50V

Number of Terminations :

5

Current Rating :

100mA

Max Collector Current :

100mA