NP80N06PLG-E1B-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

80A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

8.3m Ω @ 40A, 10V

Number of Pins :

3

Drain to Source Voltage (Vdss) :

60V

FET Type :

N-Channel

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Turn On Delay Time :

17 ns

Input Capacitance (Ciss) (Max) @ Vds :

6900pF @ 25V

Published :

2009

ECCN Code :

EAR99

Pin Count :

3

Rise Time :

13ns

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

60V

Number of Terminations :

2

Operating Temperature :

175°C TJ

Fall Time (Typ) :

7 ns

Mount :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSSO-G2

Additional Feature :

LOGIC LEVEL COMPATIBLE

Terminal Position :

Single

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Turn-Off Delay Time :

70 ns

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Configuration :

SINGLE WITH BUILT-IN DIODE

HTS Code :

8541.29.00.95

Gate Charge (Qg) (Max) @ Vgs :

128nC @ 10V

Power Dissipation-Max :

1.8W Ta 115W Tc

Operating Mode :

ENHANCEMENT MODE