NP80N055KLE-E1-AY

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

DS Breakdown Voltage-Min :

55V

Turn-Off Delay Time :

62 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2007

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

11m Ω @ 40A, 10V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Rise Time :

10ns

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

200A

Continuous Drain Current (ID) :

80A

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Fall Time (Typ) :

11 ns

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

Transistor Application :

SWITCHING

Operating Temperature :

175°C TJ

Number of Terminations :

2

Power Dissipation :

1.8W

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Drain to Source Voltage (Vdss) :

55V

Turn On Delay Time :

22 ns

Vgs (Max) :

±20V

Radiation Hardening :

No

FET Type :

N-Channel

Power Dissipation-Max :

1.8W Ta 120W Tc

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Number of Elements :

1