NP80N04KHE-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

14ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Voltage (Vdss) :

40V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

DS Breakdown Voltage-Min :

40V

Published :

2007

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

175°C TJ

Turn On Delay Time :

24 ns

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Power Dissipation-Max :

1.8W Ta 120W Tc

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Number of Elements :

1

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

3300pF @ 25V

Pin Count :

3

Fall Time (Typ) :

15 ns

Mount :

Surface Mount

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.008Ohm

Terminal Form :

Gull wing

Power Dissipation :

1.8W

Terminal Position :

Single

Turn-Off Delay Time :

44 ns

Factory Lead Time :

16 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

2

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

8m Ω @ 40A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

80A