NP80N04PLG-E1B-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Power Dissipation-Max :

1.8W Ta 115W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

HTS Code :

8541.29.00.95

JESD-30 Code :

R-PSSO-G2

Rise Time :

18ns

Continuous Drain Current (ID) :

80A

FET Type :

N-Channel

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

40V

Input Capacitance (Ciss) (Max) @ Vds :

6900pF @ 25V

Drain to Source Voltage (Vdss) :

40V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Terminal Position :

Single

Operating Temperature :

175°C TJ

Radiation Hardening :

No

Turn-Off Delay Time :

74 ns

Vgs (Max) :

±20V

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Fall Time (Typ) :

8 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

135nC @ 10V

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

80A Tc

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 40A, 10V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.0045ohm

Turn On Delay Time :

17 ns

Published :

2009

Additional Feature :

LOGIC LEVEL COMPATIBLE