NP80N06MLG-S18-AY

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

DS Breakdown Voltage-Min :

60V

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Turn-Off Delay Time :

70 ns

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0086Ohm

Additional Feature :

LOGIC LEVEL COMPATIBLE

Power Dissipation-Max :

1.8W Ta 115W Tc

ECCN Code :

EAR99

Published :

2009

Package / Case :

TO-220-3

Continuous Drain Current (ID) :

80A

Gate Charge (Qg) (Max) @ Vgs :

128nC @ 10V

Mount :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

13ns

Fall Time (Typ) :

7 ns

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Operating Temperature :

175°C TJ

Turn On Delay Time :

17 ns

Terminal Position :

Single

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

6900pF @ 25V

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

60V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

8.6m Ω @ 40A, 10V

Number of Terminations :

3

Pin Count :

3

HTS Code :

8541.29.00.95