NJT4031NT3G
- Mfr.Part #
- NJT4031NT3G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 40V 3A SOT223
- Stock
- 1,420
- In Stock :
- 1,420
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 215MHz
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 40V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 300mA, 3A
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 4
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Published :
- 2007
- Pin Count :
- 4
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 40V
- Max Power Dissipation :
- 2W
- Element Configuration :
- Single
- Factory Lead Time :
- 2 Weeks
- Lead Free :
- Lead Free
- Base Part Number :
- NJT4031
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 215MHz
- Package / Case :
- TO-261-4, TO-261AA
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector (Ic) (Max) :
- 3A
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 1V
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 40V
- Max Collector Current :
- 3A
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- hFE Min :
- 220
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- NJT4031NT3G

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NJT4031NT3G Overview
This device has a DC current gain of 200 @ 1A 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 300mV @ 300mA, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As you can see, the part has a transition frequency of 215MHz.A maximum collector current of 3A volts is possible.
NJT4031NT3G Features
the DC current gain for this device is 200 @ 1A 1V
the vce saturation(Max) is 300mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 215MHz
NJT4031NT3G Applications
There are a lot of ON Semiconductor
NJT4031NT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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