NJT4031NT1G
- Mfr.Part #
- NJT4031NT1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 40V 3A SOT223
- Stock
- 969
- In Stock :
- 969
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 300mV
- Surface Mount :
- yes
- Terminal Position :
- Dual
- Height :
- 1.65mm
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Width :
- 3.7mm
- Factory Lead Time :
- 7 Weeks
- Lead Free :
- Lead Free
- Number of Pins :
- 4
- Published :
- 2007
- Collector Base Voltage (VCBO) :
- 40V
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- Package / Case :
- TO-261-4, TO-261AA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 215MHz
- Terminal Form :
- Gull wing
- Power Dissipation :
- 2W
- Case Connection :
- COLLECTOR
- Element Configuration :
- Single
- Number of Terminations :
- 4
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 1V
- Base Part Number :
- NJT4031
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 215MHz
- Pin Count :
- 4
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Max Breakdown Voltage :
- 40V
- Max Power Dissipation :
- 2W
- Length :
- 6.7mm
- Max Collector Current :
- 3A
- Collector Emitter Voltage (VCEO) :
- 40V
- Gain Bandwidth Product :
- 215MHz
- hFE Min :
- 220
- Collector Emitter Breakdown Voltage :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 300mA, 3A
- Datasheets
- NJT4031NT1G
NJT4031NT1G Documents

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NJT4031NT1G Overview
DC current gain in this device equals 200 @ 1A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 300mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 300mA, 3A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 215MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 3A volts.
NJT4031NT1G Features
the DC current gain for this device is 200 @ 1A 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 215MHz
NJT4031NT1G Applications
There are a lot of ON Semiconductor
NJT4031NT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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