NJT4031NT1G
- Mfr.Part #
- NJT4031NT1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 40V 3A SOT223
- Stock
- 969
- In Stock :
- 969
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 220
- REACH SVHC :
- No SVHC
- Width :
- 3.7mm
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 7 Weeks
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Collector Emitter Voltage (VCEO) :
- 40V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 4
- Max Breakdown Voltage :
- 40V
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Surface Mount :
- yes
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 300mA, 3A
- Package / Case :
- TO-261-4, TO-261AA
- Terminal Position :
- Dual
- Published :
- 2007
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 6.7mm
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 6V
- Transition Frequency :
- 215MHz
- Gain Bandwidth Product :
- 215MHz
- Number of Pins :
- 4
- Height :
- 1.65mm
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 2W
- Lead Free :
- Lead Free
- Frequency :
- 215MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 40V
- Collector Base Voltage (VCBO) :
- 40V
- Collector Emitter Saturation Voltage :
- 300mV
- Base Part Number :
- NJT4031
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 1V
- Max Power Dissipation :
- 2W
- Max Collector Current :
- 3A
- Datasheets
- NJT4031NT1G

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NJT4031NT1G Overview
DC current gain in this device equals 200 @ 1A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 300mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 300mA, 3A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 215MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 3A volts.
NJT4031NT1G Features
the DC current gain for this device is 200 @ 1A 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 215MHz
NJT4031NT1G Applications
There are a lot of ON Semiconductor
NJT4031NT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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