NJT4031NT1G

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Mfr.Part #
NJT4031NT1G
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS NPN 40V 3A SOT223
Stock
969
In Stock :
969

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Polarity/Channel Type :
NPN
RoHS Status :
ROHS3 Compliant
Collector Emitter Saturation Voltage :
300mV
Surface Mount :
yes
Terminal Position :
Dual
Height :
1.65mm
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Width :
3.7mm
Factory Lead Time :
7 Weeks
Lead Free :
Lead Free
Number of Pins :
4
Published :
2007
Collector Base Voltage (VCBO) :
40V
Transistor Type :
NPN
JESD-609 Code :
e3
REACH SVHC :
No SVHC
Pbfree Code :
yes
Radiation Hardening :
No
Contact Plating :
Tin
ECCN Code :
EAR99
Emitter Base Voltage (VEBO) :
6V
Package / Case :
TO-261-4, TO-261AA
Time@Peak Reflow Temperature-Max (s) :
40
Frequency :
215MHz
Terminal Form :
Gull wing
Power Dissipation :
2W
Case Connection :
COLLECTOR
Element Configuration :
Single
Number of Terminations :
4
Current - Collector Cutoff (Max) :
100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 1A 1V
Base Part Number :
NJT4031
Peak Reflow Temperature (Cel) :
260
Packaging :
Tape and Reel (TR)
Transition Frequency :
215MHz
Pin Count :
4
Mounting Type :
Surface Mount
Operating Temperature :
-55°C~150°C TJ
Max Breakdown Voltage :
40V
Max Power Dissipation :
2W
Length :
6.7mm
Max Collector Current :
3A
Collector Emitter Voltage (VCEO) :
40V
Gain Bandwidth Product :
215MHz
hFE Min :
220
Collector Emitter Breakdown Voltage :
40V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Transistor Element Material :
SILICON
Vce Saturation (Max) @ Ib, Ic :
300mV @ 300mA, 3A
Introducing Transistors - Bipolar (BJT) - Single onsemi NJT4031NT1G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Package / Case:TO-261-4, TO-261AA, Number of Terminations:4, Base Part Number:NJT4031, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, NJT4031NT1G pinout, NJT4031NT1G datasheet PDF, NJT4031NT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NJT4031NT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NJT4031NT1G


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

NJT4031NT1G Overview


DC current gain in this device equals 200 @ 1A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 300mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 300mA, 3A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 215MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 3A volts.

NJT4031NT1G Features


the DC current gain for this device is 200 @ 1A 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 215MHz


NJT4031NT1G Applications


There are a lot of ON Semiconductor
NJT4031NT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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