NJT4030PT3G
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- Mfr.Part #
- NJT4030PT3G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 40V 3A SOT223
- Stock
- 3,262
- In Stock ：
- 3,262
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 1.65mm
- Number of Terminations :
- 4
- Collector Emitter Voltage (VCEO) :
- 40V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 40V
- Transistor Application :
- AMPLIFIER
- Package / Case :
- TO-261-4, TO-261AA
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 2W
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 160MHz
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Gull wing
- Pin Count :
- 4
- Length :
- 6.7mm
- Number of Pins :
- 4
- hFE Min :
- 220
- Base Part Number :
- NJT4030
- Case Connection :
- COLLECTOR
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Published :
- 2007
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- 500mV
- ECCN Code :
- EAR99
- Factory Lead Time :
- 8 Weeks
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Breakdown Voltage :
- 40V
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Max Power Dissipation :
- 2W
- Frequency :
- 160MHz
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- Max Collector Current :
- 3A
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 300mA, 3A
- Transition Frequency :
- 160MHz
- Collector Base Voltage (VCBO) :
- 40V
- Mounting Type :
- Surface Mount
- Width :
- 3.7mm
- Emitter Base Voltage (VEBO) :
- 6V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 1V
- Datasheets
- NJT4030PT3G
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NJT4030PT3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 1A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 300mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 160MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 3A volts.
NJT4030PT3G Features
the DC current gain for this device is 200 @ 1A 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 160MHz
NJT4030PT3G Applications
There are a lot of ON Semiconductor
NJT4030PT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NJT4030PT1G | onsemi | 34 | TRANS PNP 40V 3A SOT223 |
| NJT4031NT1G | onsemi | 969 | TRANS NPN 40V 3A SOT223 |
| NJT4031NT3G | onsemi | 1,420 | TRANS NPN 40V 3A SOT223 |
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