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NGTD28T65F2WP

NGTD28T65F2WP

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Mfr.Part #
NGTD28T65F2WP
Manufacturer
onsemi
Package / Case
Die
Datasheet
Download
Description
IGBT TRENCH FIELD STOP 650V DIE
Stock
23,256
In Stock ：
23,256

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Manufacturer :
onsemi
Product Category :
Transistors - IGBTs - Single
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 75A
Published :
2016
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Mounting Type :
Surface Mount
Packaging :
Bulk
Factory Lead Time :
5 Weeks
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
Voltage - Collector Emitter Breakdown (Max) :
650V
IGBT Type :
Trench Field Stop
Package / Case :
Die
Current - Collector Pulsed (Icm) :
200A
Operating Temperature :
-55°C~175°C TJ
Input Type :
Standard
Datasheets
NGTD28T65F2WP
Introducing Transistors - IGBTs - Single onsemi NGTD28T65F2WP from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type：Surface Mount, Package / Case：Die, Operating Temperature：-55°C~175°C TJ, NGTD28T65F2WP pinout, NGTD28T65F2WP datasheet PDF, NGTD28T65F2WP amp .Beyond Transistors - IGBTs - Single onsemi NGTD28T65F2WP ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.



NGTD28T65F2WP datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at

NGTD28T65F2WP Description


NGTD28T65F2WP is a 650v IGBT Die. The NGTD28T65F2WP Trench Field Stop II IGBT Die can be applied in Industrial Motor Drives, Solar Inverters, UPS Systems, and Welding applications due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor NGTD28T65F2WP is in the Bulk package.



NGTD28T65F2WP Features


Extremely Efficient Trench with Field Stop Technology

Low VCE(sat) Loss Reduces System Power Dissipation

Pulsed Collector Current (Note 2): 200A

Short Circuit Withstand Time, VGE = 15 V, VCE = 500V, TJ ≤ 150°C: 50μs



NGTD28T65F2WP Applications


Industrial Motor Drives

Solar Inverters

UPS Systems

Welding


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