NGTD17T65F2WP
- Mfr.Part #
- NGTD17T65F2WP
- Manufacturer
- onsemi
- Package / Case
- Die
- Datasheet
- Download
- Description
- IGBT TRENCH FIELD STOP 650V DIE
- Stock
- 16,876
- In Stock :
- 16,876
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- RoHS Status :
- ROHS3 Compliant
- IGBT Type :
- Trench Field Stop
- Factory Lead Time :
- 6 Weeks
- Mounting Type :
- Surface Mount
- Packaging :
- Bulk
- Pbfree Code :
- yes
- Package / Case :
- Die
- Voltage - Collector Emitter Breakdown (Max) :
- 650V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Operating Temperature :
- -55°C~175°C TJ
- Published :
- 2016
- Input Type :
- Standard
- Current - Collector Pulsed (Icm) :
- 160A
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 40A
- Datasheets
- NGTD17T65F2WP
NGTD17T65F2WP datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
NGTD17T65F2WP Description
NGTD17T65F2WP is a 650V insulated gate bipolar transistor(IGBT). This Insulated Gate Bipolar Transistor (IGBT) NGTD17T65F2WP features a robust and cost-effective Field Stop II Trench construction and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The Operating and Storage Temperature Range is between -55 and 175℃.
NGTD17T65F2WP Features
Extremely Efficient Trench with Field Stop Technology
Low VCE(sat) Loss Reduces System Power Dissipation
TJmax = 175°C
Optimized for High-Speed Switching
5 μs Short Circuit Capability
Pb?Free Devices
NGTD17T65F2WP Applications
Industrial Motor Drives
Solar Inverters
UPS Systems
Welding
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