NGTD13T65F2WP

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Mfr.Part #
NGTD13T65F2WP
Manufacturer
onsemi
Package / Case
Die
Datasheet
Download
Description
IGBT TRENCH FIELD STOP 650V DIE
Stock
20,651
In Stock :
20,651

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Manufacturer :
onsemi
Product Category :
Transistors - IGBTs - Single
IGBT Type :
Trench Field Stop
Factory Lead Time :
4 Weeks
RoHS Status :
ROHS3 Compliant
Current - Collector Pulsed (Icm) :
120A
Pbfree Code :
yes
Published :
2016
Packaging :
Bulk
Mounting Type :
Surface Mount
Input Type :
Standard
Operating Temperature :
-55°C~175°C TJ
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Vce(on) (Max) @ Vge, Ic :
2.2V @ 15V, 30A
Voltage - Collector Emitter Breakdown (Max) :
650V
Package / Case :
Die
Datasheets
NGTD13T65F2WP
Introducing Transistors - IGBTs - Single onsemi NGTD13T65F2WP from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Package / Case:Die, NGTD13T65F2WP pinout, NGTD13T65F2WP datasheet PDF, NGTD13T65F2WP amp .Beyond Transistors - IGBTs - Single onsemi NGTD13T65F2WP ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.



NGTD13T65F2WP datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at

NGTD13T65F2WP Description


NGTD13T65F2WP developed by ON Semiconductor is a type of Trench Field Stop II IGBT Die for motor drive and inverter applications. It is designed based on Field Stop technology for low VCE(sat) loss to reduce system power dissipation. Based on its specific characteristics, the NGTD13T65F2WP IGBT is well suited for a wide range of applications, including industrial motor drives, 

solar inverters, UPS systems, welding, and more.



NGTD13T65F2WP Features


Low VCE(sat) loss

Field Stop technology

Collector?Emitter Voltage, TJ = 25°C: 650V

Maximum junction temperature TJ : ?55 to +175 °C



NGTD13T65F2WP Applications


Industrial motor drives

Solar inverters

UPS systems

Welding


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