NDS9952A

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Mfr.Part #
NDS9952A
Manufacturer
Fairchild Semiconductor
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
POWER FIELD-EFFECT TRANSISTOR, 3
Stock
48,803
In Stock :
48,803

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Arrays
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Dual
Pbfree Code :
yes
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Rds On (Max) @ Id, Vgs :
80m Ω @ 1A, 10V
Continuous Drain Current (ID) :
3.7A
Weight :
230.4mg
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Threshold Voltage :
1.7V
Rise Time :
21ns
Terminal Form :
Gull wing
Number of Pins :
8
Fall Time (Typ) :
8 ns
Transistor Element Material :
SILICON
Mounting Type :
Surface Mount
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Factory Lead Time :
18 Weeks
REACH SVHC :
No SVHC
Lead Free :
Lead Free
Gate to Source Voltage (Vgs) :
20V
Packaging :
Tape and Reel (TR)
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Radiation Hardening :
No
Turn-Off Delay Time :
21 ns
FET Feature :
Logic Level Gate
Power Dissipation :
2W
Termination :
SMD/SMT
Current Rating :
2.9A
Nominal Vgs :
1.7 V
Drain to Source Breakdown Voltage :
30V
Dual Supply Voltage :
30V
Number of Terminations :
8
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Max Power Dissipation :
900mW
Number of Elements :
2
Terminal Finish :
Tin (Sn)
Vgs(th) (Max) @ Id :
2.8V @ 250μA
Polarity/Channel Type :
N-CHANNEL AND P-CHANNEL
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pulsed Drain Current-Max (IDM) :
15A
Input Capacitance (Ciss) (Max) @ Vds :
320pF @ 10V
FET Type :
N and P-Channel
Current - Continuous Drain (Id) @ 25°C :
3.7A 2.9A
Mount :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Resistance :
80mOhm
RoHS Status :
ROHS3 Compliant
Datasheets
NDS9952A
Introducing Transistors - FETs, MOSFETs - Arrays Fairchild Semiconductor NDS9952A from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:8, Mounting Type:Surface Mount, Number of Terminations:8, Package / Case:8-SOIC (0.154, 3.90mm Width), NDS9952A pinout, NDS9952A datasheet PDF, NDS9952A amp .Beyond Transistors - FETs, MOSFETs - Arrays Fairchild Semiconductor NDS9952A ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor NDS9952A


NDS9952A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

NDS9952A Description


These dual N- and P-channel enhancement mode power field effect transistors are made utilizing a high cell density DMOS process that is exclusive to ON Semiconductors. In the avalanche and commutation modes, this very high density technology is specifically designed to decrease on-state resistance, offer improved switching performance, and withstand high energy pulses. These components are especially well suited for low voltage applications like battery powered circuits and laptop computer power management, which require quick switching, little in-line power loss, and transient resistance.



NDS9952A Features


  • N-Channel 3.7 A, 30 V, RDS(ON) = 0.08 W @ VGS = 10 V.

  • P-Channel: 2.9A, -30V, 0.13W at -10V for RDS(ON).

  • High density cell architecture or a very low RDS (ON).

  • a surface mount package with high power and current handling capacity.

  • Surface-mount MOSFET with dual (N and P) channels.



NDS9952A Applications


Switching applications


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