NDS9952A
- Mfr.Part #
- NDS9952A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 3
- Stock
- 48,803
- In Stock :
- 48,803
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Dual
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 1A, 10V
- Continuous Drain Current (ID) :
- 3.7A
- Weight :
- 230.4mg
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Threshold Voltage :
- 1.7V
- Rise Time :
- 21ns
- Terminal Form :
- Gull wing
- Number of Pins :
- 8
- Fall Time (Typ) :
- 8 ns
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Factory Lead Time :
- 18 Weeks
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 21 ns
- FET Feature :
- Logic Level Gate
- Power Dissipation :
- 2W
- Termination :
- SMD/SMT
- Current Rating :
- 2.9A
- Nominal Vgs :
- 1.7 V
- Drain to Source Breakdown Voltage :
- 30V
- Dual Supply Voltage :
- 30V
- Number of Terminations :
- 8
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Max Power Dissipation :
- 900mW
- Number of Elements :
- 2
- Terminal Finish :
- Tin (Sn)
- Vgs(th) (Max) @ Id :
- 2.8V @ 250μA
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 15A
- Input Capacitance (Ciss) (Max) @ Vds :
- 320pF @ 10V
- FET Type :
- N and P-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 3.7A 2.9A
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Resistance :
- 80mOhm
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- NDS9952A

NDS9952A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
NDS9952A Description
These dual N- and P-channel enhancement mode power field effect transistors are made utilizing a high cell density DMOS process that is exclusive to ON Semiconductors. In the avalanche and commutation modes, this very high density technology is specifically designed to decrease on-state resistance, offer improved switching performance, and withstand high energy pulses. These components are especially well suited for low voltage applications like battery powered circuits and laptop computer power management, which require quick switching, little in-line power loss, and transient resistance.
NDS9952A Features
-
N-Channel 3.7 A, 30 V, RDS(ON) = 0.08 W @ VGS = 10 V.
-
P-Channel: 2.9A, -30V, 0.13W at -10V for RDS(ON).
-
High density cell architecture or a very low RDS (ON).
-
a surface mount package with high power and current handling capacity.
-
Surface-mount MOSFET with dual (N and P) channels.
NDS9952A Applications
Switching applications
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