NDS8958
- Mfr.Part #
- NDS8958
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N/P-CH 30V 5.3A/4A 8SOIC
- Stock
- 12,635
- In Stock :
- 12,635
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current Rating :
- 2.9A
- Max Power Dissipation :
- 900mW
- Turn-Off Delay Time :
- 40 ns
- REACH SVHC :
- No SVHC
- Current - Continuous Drain (Id) @ 25°C :
- 5.3A 4A
- FET Type :
- N and P-Channel
- Number of Pins :
- 8
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 19 ns
- Number of Elements :
- 2
- Packaging :
- Tape and Reel (TR)
- Nominal Vgs :
- 1.6 V
- Threshold Voltage :
- 1.6V
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Mount :
- Surface Mount
- Resistance :
- 50mOhm
- Continuous Drain Current (ID) :
- 4A
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 5.3A, 10V
- Power Dissipation :
- 2W
- FET Feature :
- Logic Level Gate
- Rise Time :
- 20ns
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Weight :
- 230.4mg
- Drain to Source Breakdown Voltage :
- 30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 720pF @ 15V
- Lead Free :
- Lead Free
- Element Configuration :
- Dual
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 2.8V @ 250μA
- Datasheets
- NDS8958

NDS8958 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
NDS8958 Description
These double N-channel and P-channel enhanced mode power field effect transistors are produced using Xiantong's proprietary high cell density. DMOS technology. This very high-density process is specially tailored to minimize on-resistance and provide excellent switching performance. These devices are particularly suitable for low-voltage applications, such as notebook power management and other battery-powered circuits, which have fast switching speeds and low online power consumption. Resistance to transients is necessary.
NDS8958 Features
N-Channel 5.3A30VRpoN=0.035@Va=10V.
P-Channel-4.0A-30V,Rs=0.065@V=-10V
High density cell design or extremely low RpsoN
High power and current handling capability in a widely used suriace mount package.
Dual(N &P-Channel) MOSFET in surface mount package
NDS8958 Applications
low-voltage applications
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