NDS8958

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Mfr.Part #
NDS8958
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N/P-CH 30V 5.3A/4A 8SOIC
Stock
12,635
In Stock :
12,635

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
Current Rating :
2.9A
Max Power Dissipation :
900mW
Turn-Off Delay Time :
40 ns
REACH SVHC :
No SVHC
Current - Continuous Drain (Id) @ 25°C :
5.3A 4A
FET Type :
N and P-Channel
Number of Pins :
8
Mounting Type :
Surface Mount
Fall Time (Typ) :
19 ns
Number of Elements :
2
Packaging :
Tape and Reel (TR)
Nominal Vgs :
1.6 V
Threshold Voltage :
1.6V
RoHS Status :
RoHS Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Mount :
Surface Mount
Resistance :
50mOhm
Continuous Drain Current (ID) :
4A
Rds On (Max) @ Id, Vgs :
35m Ω @ 5.3A, 10V
Power Dissipation :
2W
FET Feature :
Logic Level Gate
Rise Time :
20ns
Gate to Source Voltage (Vgs) :
20V
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Weight :
230.4mg
Drain to Source Breakdown Voltage :
30V
Input Capacitance (Ciss) (Max) @ Vds :
720pF @ 15V
Lead Free :
Lead Free
Element Configuration :
Dual
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
2.8V @ 250μA
Datasheets
NDS8958
Introducing Transistors - FETs, MOSFETs - Arrays onsemi NDS8958 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Mounting Type:Surface Mount, Package / Case:8-SOIC (0.154, 3.90mm Width), Operating Temperature:-55°C~150°C TJ, NDS8958 pinout, NDS8958 datasheet PDF, NDS8958 amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi NDS8958 ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NDS8958


NDS8958 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

NDS8958              Description

 

  These double N-channel and P-channel enhanced mode power field effect transistors are produced using Xiantong's proprietary high cell density. DMOS technology. This very high-density process is specially tailored to minimize on-resistance and provide excellent switching performance. These devices are particularly suitable for low-voltage applications, such as notebook power management and other battery-powered circuits, which have fast switching speeds and low online power consumption. Resistance to transients is necessary.

 

NDS8958                         Features


N-Channel 5.3A30VRpoN=0.035@Va=10V.

P-Channel-4.0A-30VRs=0.065@V=-10V

High density cell design or extremely low RpsoN

High power and current handling capability in a widely used suriace mount package.

Dual(N &P-Channel) MOSFET in surface mount package

 

NDS8958             Applications


 low-voltage applications

 





 

 


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