NDS8425

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

18 Weeks

JESD-609 Code :

e3

Height :

1.575mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

3.9mm

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Terminal Finish :

Tin (Sn)

Fall Time (Typ) :

11 ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Input Capacitance (Ciss) (Max) @ Vds :

1098pF @ 15V

Published :

2001

Terminal Position :

Dual

Mounting Type :

Surface Mount

Vgs (Max) :

±8V

Power Dissipation :

2.5W

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Length :

4.9mm

Lead Free :

Lead Free

Current Rating :

7.4A

FET Type :

N-Channel

Series :

PowerTrench®

Rise Time :

13ns

Mount :

Surface Mount

Turn On Delay Time :

9 ns

Drain to Source Breakdown Voltage :

20V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Transistor Element Material :

SILICON

Voltage - Rated DC :

20V

Rds On (Max) @ Id, Vgs :

22m Ω @ 7.4A, 4.5V

Number of Elements :

1

Element Configuration :

Single

Weight :

130mg

Turn-Off Delay Time :

26 ns

Power Dissipation-Max :

2.5W Ta

Transistor Application :

SWITCHING

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

8V

Current - Continuous Drain (Id) @ 25°C :

7.4A Ta

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

7.4A

Drain-source On Resistance-Max :

0.022Ohm

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Radiation Hardening :

No