NDS8410
- Mfr.Part #
- NDS8410
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 10A 8SOIC
- Stock
- 45,111
- In Stock :
- 45,111
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1350pF @ 15V
- Vgs (Max) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Power Dissipation-Max :
- 2.5W Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- RoHS Status :
- Non-RoHS Compliant
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 10A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Voltage (Vdss) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- NDS8410

N-Channel Tape & Reel (TR) 15m Ω @ 10A, 10V 20V 1350pF @ 15V 60nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
NDS8410 Description
This high cell density, DMOS N-Channel enhancement mode power field effect transistor is made exclusively by Fairchild. Specifically designed to reduce on-state resistance and offer greater switching performance, this extremely high density technology. These components are especially well suited for low voltage applications like battery powered circuits and laptop computer power management, which require quick switching, little in-line power loss, and transient resistance.
NDS8410 Features
-
10A, 30V. RDS(ON) = 0.015W @ VGS = 10V
-
High density cell design for extremely low RDS(ON).
-
High power and current handling capability in a widely used surface mount package.
NDS8410 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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