NDS8936

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

720pF @ 15V

Packaging :

Tape and Reel (TR)

Terminal Finish :

MATTE TIN

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

5.3A

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

30V

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

30V

Surface Mount :

yes

Transistor Element Material :

SILICON

Qualification Status :

COMMERCIAL

Number of Terminations :

8

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-G8

Pin Count :

8

Rds On (Max) @ Id, Vgs :

35m Ω @ 5.3A, 10V

FET Feature :

Logic Level Gate

Drain Current-Max (Abs) (ID) :

5.3A

Vgs(th) (Max) @ Id :

2.8V @ 250μA

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

2 N-Channel (Dual)

Terminal Form :

Gull wing

Power - Max :

900mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

20A

Peak Reflow Temperature (Cel) :

260

Number of Elements :

2

Drain-source On Resistance-Max :

0.035Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED