NDS8926
- Mfr.Part #
- NDS8926
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET DUAL N-CH 20V 8-SO
- Stock
- 30,419
- In Stock :
- 30,419
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Feature :
- Logic Level Gate
- Mounting Type :
- Surface Mount
- Power - Max :
- 900mW
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 4.5V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- RoHS Status :
- Non-RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 760pF @ 10V
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A
- FET Type :
- 2 N-Channel (Dual)
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 5.5A, 4.5V
- Drain to Source Voltage (Vdss) :
- 20V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Datasheets
- NDS8926

NDS8926 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
NDS8926 Description
These N-channel enhanced power field effect transistors are manufactured using Fairchild's PRPRORT, high cell density, and DMOS technology, a high-density process tailored to minimize on-resistance and provide excellent switching performance. These devices are particularly suitable for low-voltage applications such as DC motor control and DC/DC conversion, which require fast switching, low series power loss and anti-transient.
NDS8926 Features
5.5A20VR=0.035@V=4.5V
RpsON=0.045Ω@Vs=2.7 V.
High density cell design for extremely low RDejon
High power and current handling capability in a widely used
surface mount package.
Dual MOSFET in surface mount package.
NDS8926 Applications
low-voltage applications
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