NDS8858H

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

260

FET Feature :

Logic Level Gate

Surface Mount :

yes

Terminal Position :

Dual

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2.8V @ 250μA

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

FET Type :

N and P-Channel

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power - Max :

1W

Drain Current-Max (Abs) (ID) :

6.3A

Current - Continuous Drain (Id) @ 25°C :

6.3A 4.8A

DS Breakdown Voltage-Min :

30V

Pbfree Code :

yes

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

35m Ω @ 4.8A, 10V

Pin Count :

8

JESD-30 Code :

R-PDSO-G8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tape and Reel (TR)

Qualification Status :

COMMERCIAL

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

MATTE TIN

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Number of Terminations :

8

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

720pF @ 15V

Drain-source On Resistance-Max :

0.035Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)