NDM3000

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

30V

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Transistor Element Material :

SILICON

Terminal Position :

Dual

Power - Max :

1.4W

FET Feature :

Logic Level Gate

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

90m Ω @ 3A, 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Mounting Type :

Surface Mount

Pbfree Code :

yes

Configuration :

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

360pF @ 10V

DS Breakdown Voltage-Min :

30V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Qualification Status :

COMMERCIAL

Reach Compliance Code :

Unknown

Package / Case :

16-SOIC (0.154, 3.90mm Width)

Current - Continuous Drain (Id) @ 25°C :

3A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

16

Terminal Finish :

MATTE TIN

Number of Elements :

6

Drain Current-Max (Abs) (ID) :

3A

Pin Count :

16

FET Type :

3 N and 3 P-Channel (3-Phase Bridge)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G16

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.16Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED