NAND512W3A2SZA6E

Manufacturer :

Micron Technology

Product Category :

Memory

Organization :

64MX8

Terminal Position :

BOTTOM

Address Bus Width :

26b

Memory Size :

512Mb 64M x 8

Memory Type :

Non-Volatile

JESD-609 Code :

e2

Write Cycle Time - Word, Page :

50ns

Sync/Async :

ASYNCHRONOUS

Data Polling :

No

Peak Reflow Temperature (Cel) :

260

Packaging :

Tray

Operating Temperature :

-40°C~85°C TA

Length :

11mm

Word Size :

8B

Voltage :

3V

Number of Pins :

63

Radiation Hardening :

No

Memory Format :

Flash

Command User Interface :

yes

Memory Width :

8

Page Size :

512B

Access Time (Max) :

35 ns

Published :

2004

Number of Functions :

1

Voltage - Rated DC :

3V

Base Part Number :

NAND512

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Ready/Busy :

yes

Package / Case :

63-TFBGA

Mount :

Surface Mount

Memory Interface :

Parallel

Nominal Supply Current :

20mA

ECCN Code :

3A991.B.1.A

Number of Sectors/Size :

4k

Mounting Type :

Surface Mount

Supply Voltage :

3V

Voltage - Supply :

2.7V~3.6V

Toggle Bit :

No

Terminal Finish :

Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

Sector Size :

16k

Terminal Pitch :

0.8mm

Number of Terminations :

63

Standby Current-Max :

0.00005A

RoHS Status :

ROHS3 Compliant

Height Seated (Max) :

1.05mm

HTS Code :

8542.32.00.51

Time@Peak Reflow Temperature-Max (s) :

30

Density :

512 Mb