NAND01GR3B2CZA6E

Manufacturer :

Micron Technology

Product Category :

Memory

Operating Supply Voltage :

1.8V

Access Time (Max) :

25000 ns

Sector Size :

128K

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Nominal Supply Current :

20mA

Memory Interface :

Parallel

Sync/Async :

ASYNCHRONOUS

Height Seated (Max) :

1.05mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Memory Type :

Non-Volatile

Ready/Busy :

yes

HTS Code :

8542.32.00.51

Number of Functions :

1

Standby Current-Max :

0.00005A

Base Part Number :

NAND01G-A

Address Bus Width :

28b

Memory Format :

Flash

Published :

2004

Pin Count :

63

Page Size :

2kB

Density :

1 Gb

Reach Compliance Code :

Unknown

ECCN Code :

3A991.B.1.A

Organization :

128MX8

Length :

11mm

Write Cycle Time - Word, Page :

25ns

Packaging :

Tray

Supply Voltage-Min (Vsup) :

1.7V

Qualification Status :

Not Qualified

Package / Case :

63-TFBGA

RoHS Status :

ROHS3 Compliant

Terminal Pitch :

0.8mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Supply Voltage :

1.8V

Terminal Position :

BOTTOM

Mount :

Surface Mount

Data Polling :

No

Number of Sectors/Size :

1k

Memory Width :

8

Number of Terminations :

63

Voltage - Supply :

1.7V~1.95V

Mounting Type :

Surface Mount

Number of Pins :

63

Toggle Bit :

No

Operating Temperature :

-40°C~85°C TA

Supply Voltage-Max (Vsup) :

1.95V

Memory Size :

1Gb 128M x 8

Word Size :

8B

Command User Interface :

yes