NAND01GR3B2CZA6E

Manufacturer :

Micron Technology

Product Category :

Memory

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2004

Command User Interface :

yes

Operating Supply Voltage :

1.8V

Number of Terminations :

63

Operating Temperature :

-40°C~85°C TA

Supply Voltage-Min (Vsup) :

1.7V

Number of Functions :

1

Memory Size :

1Gb 128M x 8

Qualification Status :

Not Qualified

Access Time (Max) :

25000 ns

Base Part Number :

NAND01G-A

Memory Type :

Non-Volatile

Reach Compliance Code :

Unknown

Ready/Busy :

yes

Packaging :

Tray

Package / Case :

63-TFBGA

Number of Sectors/Size :

1k

Memory Width :

8

Length :

11mm

Mounting Type :

Surface Mount

Supply Voltage :

1.8V

Height Seated (Max) :

1.05mm

Supply Voltage-Max (Vsup) :

1.95V

Page Size :

2kB

Data Polling :

No

Memory Interface :

Parallel

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Position :

BOTTOM

Organization :

128MX8

Mount :

Surface Mount

ECCN Code :

3A991.B.1.A

Write Cycle Time - Word, Page :

25ns

Nominal Supply Current :

20mA

Sector Size :

128K

Sync/Async :

ASYNCHRONOUS

Pin Count :

63

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Memory Format :

Flash

Address Bus Width :

28b

Standby Current-Max :

0.00005A

Toggle Bit :

No

Number of Pins :

63

Terminal Pitch :

0.8mm

Density :

1 Gb

Voltage - Supply :

1.7V~1.95V

Word Size :

8B

HTS Code :

8542.32.00.51

RoHS Status :

ROHS3 Compliant