NAND01GW3B2CZA6E

Manufacturer :

Micron Technology

Product Category :

Memory

HTS Code :

8542.32.00.51

Radiation Hardening :

No

Height Seated (Max) :

1.05mm

Word Size :

8B

Toggle Bit :

No

Memory Size :

1Gb 128M x 8

Memory Width :

8

Memory Type :

Non-Volatile

Pin Count :

63

Memory Interface :

Parallel

Programming Voltage :

3V

Operating Temperature :

-40°C~85°C TA

JESD-609 Code :

e1

Package / Case :

63-TFBGA

Terminal Pitch :

0.8mm

Mounting Type :

Surface Mount

Density :

1 Gb

Number of Terminations :

63

Number of Sectors/Size :

1k

Nominal Supply Current :

30mA

Published :

2004

Packaging :

Tray

RoHS Status :

ROHS3 Compliant

Organization :

128MX8

Terminal Position :

BOTTOM

Number of Functions :

1

Supply Voltage-Max (Vsup) :

3.6V

Mount :

Surface Mount

Power Supplies :

3/3.3V

Address Bus Width :

28b

Supply Voltage :

3V

Length :

11mm

Write Cycle Time-Max (tWC) :

25ms

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Ready/Busy :

yes

Sync/Async :

ASYNCHRONOUS

Number of Pins :

63

Command User Interface :

yes

Memory Format :

Flash

Voltage - Supply :

2.7V~3.6V

ECCN Code :

3A991.B.1.A

Page Size :

2Kwords

Standby Current-Max :

0.00005A

Write Cycle Time - Word, Page :

25ns

Access Time (Max) :

25000 ns

Sector Size :

128K

Data Polling :

No

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Base Part Number :

NAND01G-A

Supply Voltage-Min (Vsup) :

2.7V