NAND01GW3B2CZA6E

Manufacturer :

Micron Technology

Product Category :

Memory

Terminal Pitch :

0.8mm

Number of Terminations :

63

Memory Format :

Flash

Supply Voltage :

3V

Power Supplies :

3/3.3V

Terminal Position :

BOTTOM

Write Cycle Time - Word, Page :

25ns

ECCN Code :

3A991.B.1.A

Number of Functions :

1

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Page Size :

2Kwords

Height Seated (Max) :

1.05mm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Base Part Number :

NAND01G-A

Packaging :

Tray

Ready/Busy :

yes

Memory Size :

1Gb 128M x 8

Command User Interface :

yes

JESD-609 Code :

e1

Nominal Supply Current :

30mA

Published :

2004

Sector Size :

128K

Toggle Bit :

No

Package / Case :

63-TFBGA

Address Bus Width :

28b

Radiation Hardening :

No

Sync/Async :

ASYNCHRONOUS

Length :

11mm

Mount :

Surface Mount

Mounting Type :

Surface Mount

Programming Voltage :

3V

HTS Code :

8542.32.00.51

Memory Interface :

Parallel

Voltage - Supply :

2.7V~3.6V

Access Time (Max) :

25000 ns

Supply Voltage-Min (Vsup) :

2.7V

Number of Sectors/Size :

1k

Data Polling :

No

Write Cycle Time-Max (tWC) :

25ms

RoHS Status :

ROHS3 Compliant

Standby Current-Max :

0.00005A

Density :

1 Gb

Word Size :

8B

Memory Type :

Non-Volatile

Memory Width :

8

Operating Temperature :

-40°C~85°C TA

Organization :

128MX8

Supply Voltage-Max (Vsup) :

3.6V

Pin Count :

63

Number of Pins :

63