NAND02GR3B2DZA6E
- Mfr.Part #
- NAND02GR3B2DZA6E
- Manufacturer
- Micron Technology
- Package / Case
- 63-TFBGA
- Datasheet
- Download
- Description
- IC FLASH 2GBIT PARALLEL 63VFBGA
- Stock
- 41,806
- In Stock :
- 41,806
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Supply Voltage-Max (Vsup) :
- 1.95V
- Number of Functions :
- 1
- Operating Temperature :
- -40°C~85°C TA
- Published :
- 2008
- Memory Interface :
- Parallel
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Toggle Bit :
- No
- HTS Code :
- 8542.32.00.51
- Height Seated (Max) :
- 1.05mm
- Command User Interface :
- yes
- Standby Current-Max :
- 0.00005A
- Supply Voltage-Min (Vsup) :
- 1.7V
- Ready/Busy :
- yes
- Nominal Supply Current :
- 20mA
- Memory Format :
- Flash
- Sync/Async :
- ASYNCHRONOUS
- Density :
- 2 GB
- Data Polling :
- No
- RoHS Status :
- ROHS3 Compliant
- Length :
- 11mm
- Number of Pins :
- 63
- Number of Terminations :
- 63
- Package / Case :
- 63-TFBGA
- Mount :
- Surface Mount
- Voltage - Supply :
- 1.7V~1.95V
- Terminal Position :
- BOTTOM
- Terminal Pitch :
- 0.8mm
- Pin Count :
- 63
- Terminal Finish :
- TIN SILVER COPPER
- Memory Width :
- 8
- Peak Reflow Temperature (Cel) :
- 260
- Memory Size :
- 2Gb 256M x 8
- Organization :
- 256MX8
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Page Size :
- 2kB
- Base Part Number :
- NAND02G
- ECCN Code :
- 3A991.B.1.A
- JESD-609 Code :
- e1
- Write Cycle Time - Word, Page :
- 45ns
- Operating Supply Voltage :
- 1.8V
- Sector Size :
- 128K
- Access Time (Max) :
- 25000 ns
- Packaging :
- Tray
- Mounting Type :
- Surface Mount
- Word Size :
- 8B
- Memory Type :
- Non-Volatile
- Supply Voltage :
- 1.8V
- Number of Sectors/Size :
- 2k
- Address Bus Width :
- 8B
- Datasheets
- NAND02GR3B2DZA6E
Memory Micron Technology NAND02GR3B2DZA6E Overview
The Memory Micron Technology NAND02GR3B2DZA6E is a state-of-the-art IC FLASH 2GBit device designed for high-speed and high-density storage solutions. Encased in a compact 63VFBGA package, this NAND flash memory offers a robust data storage solution for a variety of demanding applications. With its parallel interface, it provides an excellent balance of performance, power consumption, and cost, making it an ideal choice for bulk purchases by B2B customers seeking reliable and efficient memory components.
NAND02GR3B2DZA6E Features
This product incorporates several key features including high-density storage capacity of 2 Gbit and a parallel interface that enhances data transfer speeds. The 63VFBGA packaging not only ensures a compact footprint but also enhances thermal management and reliability under varied operational conditions. Designed for efficiency, the NAND02GR3B2DZA6E also supports a wide range of operating temperatures, making it versatile for various industrial applications.
NAND02GR3B2DZA6E Applications
- Consumer Electronics: Utilized in devices such as smartphones, tablets, and digital cameras for storing large amounts of data including applications, media files, and high-resolution images. The high-speed interface ensures quick access and storage of data, enhancing device performance.
- Industrial Automation: In automation systems, this NAND flash memory is used for logging extensive datasets and operation algorithms, which are crucial for real-time processing and machine learning applications.
- Automotive Applications: Suitable for use in advanced driver-assistance systems (ADAS) where high-density, fast-access flash memory is required to process and store sensor data, contributing to vehicle safety and functionality.
- Internet of Things (IoT) Devices: Acts as a primary storage solution for firmware and data in smart home devices and other IoT applications, where durability and the ability to handle large cycles of data writing and erasure are critical.
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