NAND01GR3B2BZA6E

Manufacturer :

Micron Technology

Product Category :

Memory

Qualification Status :

Not Qualified

Mount :

Surface Mount

Pbfree Code :

yes

Published :

2008

Data Polling :

No

Supply Voltage-Min (Vsup) :

1.7V

Number of Pins :

63

Access Time (Max) :

30 ns

Voltage - Supply :

1.7V~1.95V

RoHS Status :

ROHS3 Compliant

Write Cycle Time - Word, Page :

30ns

Memory Width :

8

Number of Terminations :

63

Pin Count :

63

Terminal Position :

BOTTOM

Base Part Number :

NAND01G-A

Supply Voltage :

1.8V

Sync/Async :

ASYNCHRONOUS

Length :

12mm

Sector Size :

128K

ECCN Code :

3A991.B.1.A

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Address Bus Width :

28b

Peak Reflow Temperature (Cel) :

260

Number of Sectors/Size :

1k

Supply Voltage-Max (Vsup) :

1.95V

Package / Case :

63-TFBGA

Memory Type :

Non-Volatile

Density :

1 Gb

Memory Size :

1Gb 128M x 8

Mounting Type :

Surface Mount

Height Seated (Max) :

1.05mm

Number of Functions :

1

Memory Interface :

Parallel

Packaging :

Tray

Word Size :

8B

Standby Current-Max :

0.00005A

Memory Format :

Flash

Page Size :

2Kwords

Command User Interface :

yes

JESD-609 Code :

e1

Toggle Bit :

No

Terminal Finish :

TIN SILVER COPPER

HTS Code :

8542.32.00.51

Operating Temperature :

-40°C~85°C TA

Organization :

128MX8

Ready/Busy :

yes

Operating Supply Voltage :

1.8V

Nominal Supply Current :

20mA

Terminal Pitch :

0.8mm