NAND512W3A2DZA6E

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Mfr.Part #
NAND512W3A2DZA6E
Manufacturer
Micron Technology
Package / Case
63-TFBGA
Datasheet
Download
Description
IC FLSH 512MBIT PARALLEL 63VFBGA
Stock
3,573
In Stock :
3,573

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Manufacturer :
Micron Technology
Product Category :
Memory
Number of Terminations :
63
Terminal Pitch :
0.8mm
Packaging :
Tray
Number of Pins :
63
Toggle Bit :
No
Sync/Async :
ASYNCHRONOUS
Write Cycle Time - Word, Page :
50ns
Ready/Busy :
yes
Operating Temperature :
-40°C~85°C TA
Memory Width :
8
Nominal Supply Current :
30mA
Data Polling :
No
Power Supplies :
3/3.3V
Organization :
64MX8
Terminal Position :
BOTTOM
Voltage - Supply :
2.7V~3.6V
Number of Sectors/Size :
4k
Page Size :
512B
Access Time (Max) :
35 ns
Base Part Number :
NAND512-A
Mount :
Surface Mount
Standby Current-Max :
0.00005A
Command User Interface :
yes
Radiation Hardening :
No
Memory Interface :
Parallel
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Package / Case :
63-TFBGA
Density :
512 Mb
RoHS Status :
ROHS3 Compliant
Memory Type :
Non-Volatile
Word Size :
8B
Address Bus Width :
26b
Memory Format :
Flash
Memory Size :
512Mb 64M x 8
Mounting Type :
Surface Mount
Sector Size :
16k
Datasheets
NAND512W3A2DZA6E
Introducing Memory Micron Technology NAND512W3A2DZA6E from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:63, Number of Pins:63, Operating Temperature:-40°C~85°C TA, Base Part Number:NAND512-A, Package / Case:63-TFBGA, Mounting Type:Surface Mount, NAND512W3A2DZA6E pinout, NAND512W3A2DZA6E datasheet PDF, NAND512W3A2DZA6E amp .Beyond Memory Micron Technology NAND512W3A2DZA6E ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology NAND512W3A2DZA6E


Memory Micron Technology NAND512W3A2DZA6E Overview

The Memory Micron Technology NAND512W3A2DZA6E is a highly reliable 512 Mbit flash memory device, designed by Micron Technology to meet the advanced requirements of high-capacity data storage systems. This NAND flash memory IC offers a parallel interface for high-speed data transmission, encapsulated in a compact 63VFBGA package. Its robust design and high-density storage capability make it an ideal solution for applications requiring rapid and reliable access to large volumes of data. The device's ability to support intensive read and write cycles ensures durability and long-term reliability, essential for modern electronic systems.

NAND512W3A2DZA6E Features

The NAND512W3A2DZA6E flash memory boasts several key features that enhance its performance and usability in various applications. It offers a 512 Mbit capacity, providing substantial space for data storage. The parallel interface ensures high-speed data transfers, crucial for systems requiring quick access and processing of information. Additionally, the 63VFBGA package is designed for efficient space utilization and can be integrated into compact system designs, making it highly versatile across different technological applications.

NAND512W3A2DZA6E Applications

  • Consumer Electronics: Used in devices like digital cameras and audio players, where large storage capacity and data stability are crucial.
  • Mobile Technology: Integral for smartphones and tablets, facilitating high storage and fast processing speeds necessary for apps and multimedia functions.
  • Automotive Systems: Employs robust flash storage that withstands extreme conditions in car infotainment systems and navigation technologies.
  • Industrial Applications: Ideal for use in factory automation systems, where long-term reliability and data integrity are paramount.
  • Networking Equipment: Used in routers and switches, enhancing device performance by storing firmware and software configurations reliably.
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