NAND512W3A2DN6E
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- Mfr.Part #
- NAND512W3A2DN6E
- Manufacturer
- Micron Technology
- Package / Case
- 48-TFSOP (0.724, 18.40mm Width)
- Datasheet
- Download
- Description
- IC FLASH 512MBIT PARALLEL 48TSOP
- Stock
- 6,612
- In Stock ：
- 6,612
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Terminal Pitch :
- 0.5mm
- Length :
- 18.4mm
- Number of Pins :
- 48
- Voltage - Supply :
- 2.7V~3.6V
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tray
- RoHS Status :
- ROHS3 Compliant
- Density :
- 512 Mb
- Standby Current-Max :
- 0.00005A
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Memory Interface :
- Parallel
- Memory Width :
- 8
- Supply Voltage-Max (Vsup) :
- 3.6V
- Number of Terminations :
- 48
- JESD-609 Code :
- e3
- Address Bus Width :
- 26b
- Command User Interface :
- yes
- Sector Size :
- 16k
- Supply Voltage-Min (Vsup) :
- 2.7V
- Memory Type :
- Non-Volatile
- Programming Voltage :
- 3V
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Nominal Supply Current :
- 30mA
- Access Time (Max) :
- 35 ns
- Published :
- 2010
- Height Seated (Max) :
- 1.2mm
- Number of Sectors/Size :
- 4k
- Data Polling :
- No
- Package / Case :
- 48-TFSOP (0.724, 18.40mm Width)
- Word Size :
- 8B
- Base Part Number :
- NAND512-A
- Page Size :
- 512B
- Operating Temperature :
- -40°C~85°C TA
- Terminal Finish :
- Matte Tin (Sn)
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Organization :
- 64MX8
- Write Cycle Time - Word, Page :
- 50ns
- Supply Voltage :
- 3V
- Number of Functions :
- 1
- Toggle Bit :
- No
- Ready/Busy :
- yes
- Memory Size :
- 512Mb 64M x 8
- Terminal Position :
- Dual
- Memory Format :
- Flash
- Sync/Async :
- ASYNCHRONOUS
- Power Supplies :
- 3/3.3V
- Datasheets
- NAND512W3A2DN6E
Memory Micron Technology NAND512W3A2DN6E Overview
Introducing the Memory Micron Technology NAND512W3A2DN6E, a high-capacity 512 Mbit flash memory IC crafted for robust performance and reliability. Manufactured by Micron Technology, this component is housed in a 48TSOP package, offering excellent durability and functionality in a compact form. Engineered for versatility, the NAND512W3A2DN6E addresses the increasing demands for substantial data storage in industrial and commercial applications. Its parallel interface ensures swift data transfer rates, making it an ideal choice for systems requiring fast access and high-speed programming of large volumes of data. This product's precision and efficiency make it an attractive option for businesses looking to leverage advanced memory solutions for enhanced system performance.
NAND512W3A2DN6E Features
The NAND512W3A2DN6E IC FLASH from Micron Technology stands out with its 512 Mbit storage capacity, allowing extensive data handling and storage. The 48TSOP package ensures a minimal footprint on the system board while providing high reliability and strength in physical structure. It supports a parallel interface for high-speed communication, which significantly optimizes programming and reading processes. Designed for endurance, this memory IC can withstand intense operational environments, making it highly suitable for various demanding applications.
NAND512W3A2DN6E Applications
- Consumer Electronics: Used in devices like digital cameras and audio players, where large, non-volatile storage is crucial for user data such as photos and music files.
- Automotive Systems: Integrated in automotive infotainment systems to store navigational data and multimedia content, enhancing the in-vehicle user experience.
- Industrial Automation: Applied in control systems for logging and data storage, providing reliable data retrieval and storage solutions that are vital for process management and operational reliability.
- Telecommunication Infrastructure: Utilized in network equipment for firmware storage, helping maintain system stability and support upgrades and functionality enhancements.
- Mobile Technology: Serves as a storage solution for mobile devices, supporting applications and user data that require high-density and durable memory components.
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