NAND512W3A2BZA6E

Manufacturer :

STMicroelectronics

Product Category :

Memory

Write Cycle Time - Word, Page :

50ns

Memory Width :

8

Number of Functions :

1

Voltage - Supply :

2.7V~3.6V

Toggle Bit :

No

Supply Voltage-Max (Vsup) :

3.6V

Height Seated (Max) :

1.05mm

Standby Current-Max :

0.00005A

Number of Terminations :

63

Supply Voltage-Min (Vsup) :

2.7V

Supply Current-Max :

0.02mA

Page Size :

512words

Pin Count :

63

Package / Case :

63-VFBGA

Length :

11mm

HTS Code :

8542.32.00.51

Number of Sectors/Size :

4k

Organization :

64MX8

Supply Voltage :

3V

Ready/Busy :

yes

Sector Size :

16k

Programming Voltage :

3V

Operating Temperature :

-40°C~85°C TA

Memory Density :

536870912 bit

Operating Mode :

ASYNCHRONOUS

ECCN Code :

3A991.B.1.A

Qualification Status :

Not Qualified

Data Bus Width :

8B

Memory Interface :

Parallel

Terminal Position :

BOTTOM

Access Time (Max) :

12000 ns

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Data Polling :

No

Mounting Type :

Surface Mount

Packaging :

Tray

Memory Size :

512Mb 64M x 8

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Power Supplies :

3/3.3V

Memory Format :

Flash

Memory Type :

Non-Volatile

Base Part Number :

NAND512

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Command User Interface :

yes

Number of Pins :

63

Terminal Pitch :

0.8mm