NAND512W3A2BN6F
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- Mfr.Part #
- NAND512W3A2BN6F
- Manufacturer
- STMicroelectronics
- Package / Case
- 48-TFSOP (0.724, 18.40mm Width)
- Datasheet
- Download
- Description
- IC FLASH 512MBIT PARALLEL 48TSOP
- Stock
- 34,538
- In Stock ：
- 34,538
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Memory
- Number of Sectors/Size :
- 4k
- Operating Mode :
- ASYNCHRONOUS
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e6
- Memory Interface :
- Parallel
- Surface Mount :
- yes
- Memory Format :
- Flash
- Height Seated (Max) :
- 1.2mm
- Supply Voltage :
- 3V
- Base Part Number :
- NAND512
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Organization :
- 64MX8
- Packaging :
- Tape and Reel (TR)
- Terminal Pitch :
- 0.5mm
- Write Cycle Time - Word, Page :
- 50ns
- Supply Voltage-Min (Vsup) :
- 2.7V
- Sector Size :
- 16k
- Power Supplies :
- 3/3.3V
- Number of Functions :
- 1
- Pin Count :
- 48
- Memory Size :
- 512Mb 64M x 8
- Supply Current-Max :
- 0.02mA
- RoHS Status :
- ROHS3 Compliant
- Voltage - Supply :
- 2.7V~3.6V
- ECCN Code :
- 3A991.B.1.A
- Number of Terminations :
- 48
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Package / Case :
- 48-TFSOP (0.724, 18.40mm Width)
- Number of Pins :
- 48
- Qualification Status :
- Not Qualified
- Supply Voltage-Max (Vsup) :
- 3.6V
- Ready/Busy :
- yes
- Standby Current-Max :
- 0.00005A
- HTS Code :
- 8542.32.00.51
- Data Bus Width :
- 8B
- Page Size :
- 512words
- Length :
- 18.4mm
- Memory Density :
- 536870912 bit
- Memory Width :
- 8
- Programming Voltage :
- 3V
- Operating Temperature :
- -40°C~85°C TA
- Terminal Finish :
- TIN BISMUTH
- Mounting Type :
- Surface Mount
- Command User Interface :
- yes
- Access Time (Max) :
- 12000 ns
- Data Polling :
- No
- Toggle Bit :
- No
- Memory Type :
- Non-Volatile
- Datasheets
- NAND512W3A2BN6F
Memory STMicroelectronics NAND512W3A2BN6F Overview
The NAND512W3A2BN6F from STMicroelectronics represents a robust and reliable flash memory solution, ideal for applications requiring high-density storage and data integrity. This 512 Mbit flash memory chip utilizes a parallel interface for enhanced data throughput and efficient interfacing with existing architectures. With its compact 48TSOP package, the NAND512W3A2BN6F ensures a minimal footprint on PCB layouts, making it a preferred choice for designers looking to optimize board space while maintaining high storage capacity. This memory device caters to the needs of B2B customers by offering a durable design that can handle the demands of extensive read/write cycles in industrial applications.
NAND512W3A2BN6F Features
This IC FLASH memory by STMicroelectronics is designed with several key features that make it highly adaptable and suitable for intensive operational requirements. Its 512 Mbit capacity allows substantial data storage, while the parallel communication facilitates faster and more reliable data transfer rates. The use of a 48TSOP package enhances the robustness of the device, providing superior durability and ease of integration in various hardware contexts.
NAND512W3A2BN6F Applications
- Embedded Systems: Integrates seamlessly into the design of consumer electronics and IoT devices, providing the essential data storage necessary for firmware and application updates.
- Automotive: Used in automotive electronics for storing calibration data and operating system software, enhancing vehicle performance and functionality.
- Industrial Automation: Serves as a reliable data repository in industrial control systems, ensuring consistent performance and data availability in critical monitoring and control tasks.
- Telecommunication Infrastructure: Supports telecommunications systems with high-capacity, dependable flash storage, essential for managing network operations and user data.
- Consumer Electronics: Provides high-density, non-volatile storage for a variety of consumer electronics, including digital cameras, audio players, and smart home devices.
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