NAND512W3A0AN6E
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- Mfr.Part #
- NAND512W3A0AN6E
- Manufacturer
- STMicroelectronics
- Package / Case
- 48-TFSOP (0.724, 18.40mm Width)
- Datasheet
- Download
- Description
- IC FLASH 512MBIT PARALLEL 48TSOP
- Stock
- 18,164
- In Stock ：
- 18,164
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Memory
- Access Time (Max) :
- 35 ns
- Data Bus Width :
- 8B
- Terminal Pitch :
- 0.5mm
- Programming Voltage :
- 3V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- HTS Code :
- 8542.32.00.51
- Qualification Status :
- Not Qualified
- Supply Current-Max :
- 0.02mA
- Voltage - Supply :
- 2.7V~3.6V
- Operating Mode :
- ASYNCHRONOUS
- Height Seated (Max) :
- 1.2mm
- Memory Type :
- Non-Volatile
- Command User Interface :
- yes
- Number of Functions :
- 1
- RoHS Status :
- Non-RoHS Compliant
- Package / Case :
- 48-TFSOP (0.724, 18.40mm Width)
- Memory Density :
- 536870912 bit
- Peak Reflow Temperature (Cel) :
- 260
- Toggle Bit :
- No
- Organization :
- 64MX8
- Memory Width :
- 8
- Memory Size :
- 512Mb 64M x 8
- Operating Temperature :
- -40°C~85°C TA
- Number of Pins :
- 48
- Ready/Busy :
- yes
- Number of Terminations :
- 48
- ECCN Code :
- 3A991.B.1.A
- Page Size :
- 512words
- Memory Format :
- Flash
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Sectors/Size :
- 4k
- Mounting Type :
- Surface Mount
- Lead Free :
- Contains Lead
- Packaging :
- Tube
- Surface Mount :
- yes
- Power Supplies :
- 3/3.3V
- Length :
- 18.4mm
- Pin Count :
- 48
- Supply Voltage-Min (Vsup) :
- 2.7V
- Data Polling :
- No
- Memory Interface :
- Parallel
- Standby Current-Max :
- 0.00005A
- Terminal Finish :
- TIN/TIN BISMUTH
- Sector Size :
- 16k
- Base Part Number :
- NAND512
- Supply Voltage :
- 3V
- Write Cycle Time - Word, Page :
- 50ns
- JESD-609 Code :
- e3/e6
- Terminal Position :
- Dual
- Supply Voltage-Max (Vsup) :
- 3.6V
- Datasheets
- NAND512W3A0AN6E
Memory STMicroelectronics NAND512W3A0AN6E Overview
The Memory STMicroelectronics NAND512W3A0AN6E is a high-capacity, parallel interface NAND Flash memory component, ideal for applications requiring mass data storage and reliability in a compact form factor. Manufactured by STMicroelectronics, this IC features a 512Mbit memory size housed within a 48-pin TSOP package, making it both efficient and space-saving. Its robust design and extensive support from STMicroelectronics ensure a reliable solution for complex data storage requirements, tailored to meet the needs of business clients seeking to integrate high-performance memory systems into their products.
NAND512W3A0AN6E Features
The NAND512W3A0AN6E Flash memory offers several key features that make it an attractive choice for various high-capacity storage applications:
- 512 Mbit density for substantial data storage capability.
- Parallel interface, providing a balance between performance and cost-efficiency.
- 48-pin TSOP package allows for compact board designs.
- High endurance and reliability suitable for intensive operations.
- Low power consumption, enhancing device longevity in portable applications.
NAND512W3A0AN6E Applications
- Consumer Electronics: Used in devices like digital cameras and MP3 players, where high data storage capacity and space efficiency are crucial.
- Mobile Devices: Integrates into smartphones and tablets to enhance onboard storage capacity, supporting larger user data and more complex applications without compromising performance.
- Automotive Applications: Serves as reliable data storage within navigation systems, providing quick access to map data and media content.
- Internet of Things (IoT) Devices: Acts as the data repository in IoT devices, storing critical information collected from sensors and other inputs in smart home and industrial automation systems.
- Embedded Systems: Provides bulk memory storage for embedded systems, supporting complex applications in robotics and other automated technologies.
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