NAND512R3A2SN6E

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Mfr.Part #
NAND512R3A2SN6E
Manufacturer
Micron Technology
Package / Case
48-TFSOP (0.724, 18.40mm Width)
Datasheet
Download
Description
IC FLASH 512MBIT PAR 48TSOP I
Stock
44,153
In Stock :
44,153

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Manufacturer :
Micron Technology
Product Category :
Memory
Nominal Supply Current :
15mA
Mounting Type :
Surface Mount
Supply Voltage-Min (Vsup) :
1.7V
Terminal Position :
Dual
Operating Supply Voltage :
1.8V
Organization :
64MX8
Supply Voltage :
1.8V
Number of Functions :
1
Operating Temperature :
-40°C~85°C TA
Address Bus Width :
26b
Number of Terminations :
48
Package / Case :
48-TFSOP (0.724, 18.40mm Width)
Memory Format :
Flash
Memory Interface :
Parallel
RoHS Status :
ROHS3 Compliant
Memory Size :
512Mb 64M x 8
Word Size :
8B
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Radiation Hardening :
No
Voltage - Supply :
1.7V~1.95V
Memory Width :
8
Memory Type :
Non-Volatile
Supply Voltage-Max (Vsup) :
1.95V
Terminal Pitch :
0.5mm
Sync/Async :
ASYNCHRONOUS
Write Cycle Time - Word, Page :
50ns
Mount :
Surface Mount
Packaging :
Tray
Page Size :
512B
Number of Pins :
48
Density :
512 Mb
Height Seated (Max) :
1.2mm
Published :
2011
Length :
18.4mm
Datasheets
NAND512R3A2SN6E
Introducing Memory Micron Technology NAND512R3A2SN6E from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-40°C~85°C TA, Number of Terminations:48, Package / Case:48-TFSOP (0.724, 18.40mm Width), Number of Pins:48, NAND512R3A2SN6E pinout, NAND512R3A2SN6E datasheet PDF, NAND512R3A2SN6E amp .Beyond Memory Micron Technology NAND512R3A2SN6E ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology NAND512R3A2SN6E


Memory Micron Technology NAND512R3A2SN6E Overview

The Memory Micron Technology NAND512R3A2SN6E is a high-capacity, high-performance IC FLASH memory device, offering 512 Mbit of storage space in a compact 48TSOP package. This product is designed to meet the rigorous demands of high-data throughput systems, providing reliable storage solutions for a variety of applications. The NAND512R3A2SN6E utilizes parallel interface technology, ensuring fast data transfer rates and efficient operations. Its robust design and Micron's advanced manufacturing technology make it an ideal choice for developers looking to integrate high-speed, durable memory into their systems, thereby ensuring a solid foundation for the development and mass deployment of technology products.

NAND512R3A2SN6E Features

  • High Capacity: 512 Mbit storage enables extensive data logging and high-volume firmware applications.
  • Durable Design: Built for endurance, it supports extensive read/write cycles, suitable for high-demand applications.
  • Parallel Interface: Allows high-speed data transfer which is essential for performance-critical applications.
  • Compact Form Factor: The 48TSOP package is ideal for space-constrained applications, providing significant memory in a small footprint.

NAND512R3A2SN6E Applications

  • Embedded Systems: Utilized in control systems for automotive and industrial applications to manage operational data efficiently.
  • Consumer Electronics: Perfect for use in devices like digital cameras and MP3 players, where large amounts of storage are necessary for user data.
  • Telecommunications: Employs in networking equipment to store firmware and configuration files, ensuring smooth and reliable network operations.
  • Security Systems: Applied in security cameras and surveillance systems to store high-resolution video data over extended periods.
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