NAND512R3A2DZA6E
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- Mfr.Part #
- NAND512R3A2DZA6E
- Manufacturer
- Micron Technology
- Package / Case
- 63-TFBGA
- Datasheet
- Download
- Description
- IC FLSH 512MBIT PARALLEL 63VFBGA
- Stock
- 17,580
- In Stock ：
- 17,580
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Memory Size :
- 512Mb 64M x 8
- JESD-609 Code :
- e1
- Address Bus Width :
- 26b
- Peak Reflow Temperature (Cel) :
- 260
- Command User Interface :
- yes
- Pin Count :
- 63
- Density :
- 512 Mb
- Nominal Supply Current :
- 15mA
- Number of Functions :
- 1
- Mounting Type :
- Surface Mount
- Base Part Number :
- NAND512-A
- Packaging :
- Tray
- Number of Sectors/Size :
- 4k
- Length :
- 11mm
- Operating Supply Voltage :
- 1.8V
- Memory Type :
- Non-Volatile
- Page Size :
- 512B
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Height Seated (Max) :
- 1.05mm
- Word Size :
- 8B
- Number of Pins :
- 63
- Radiation Hardening :
- No
- Supply Voltage :
- 1.8V
- Mount :
- Surface Mount
- Package / Case :
- 63-TFBGA
- Sync/Async :
- ASYNCHRONOUS
- Sector Size :
- 16k
- Terminal Pitch :
- 0.8mm
- Memory Format :
- Flash
- Toggle Bit :
- No
- Voltage - Supply :
- 1.7V~1.95V
- Ready/Busy :
- yes
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Data Polling :
- No
- Terminal Position :
- BOTTOM
- Write Cycle Time - Word, Page :
- 50ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Supply Voltage-Max (Vsup) :
- 1.95V
- Standby Current-Max :
- 0.00005A
- Memory Width :
- 8
- RoHS Status :
- ROHS3 Compliant
- Organization :
- 64MX8
- Operating Temperature :
- -40°C~85°C TA
- Memory Interface :
- Parallel
- Supply Voltage-Min (Vsup) :
- 1.7V
- Access Time (Max) :
- 15000 ns
- Number of Terminations :
- 63
- Datasheets
- NAND512R3A2DZA6E
Memory Micron Technology NAND512R3A2DZA6E Overview
The Memory Micron Technology NAND512R3A2DZA6E is a high-performance NAND flash memory module designed for demanding applications that require large, reliable storage solutions. With a memory capacity of 512 Mbits and packaged in a compact 63VFBGA format, this integrated circuit from Micron Technology is ideal for advanced digital systems that need robust data integrity and speed. Its parallel interface ensures high throughput and low latency, making it particularly suitable for industrial applications where performance and durability are critical.
NAND512R3A2DZA6E Features
This NAND flash memory IC features a large storage capacity of 512 Mbits, enabling substantial data storage in a small form factor. The parallel communication interface provides significant advantages in terms of data transfer speed and reliability, which is essential for high-performance computing environments. Furthermore, the 63VFBGA package offers enhanced thermal and mechanical performance, making it a reliable choice for tightly integrated system designs.
NAND512R3A2DZA6E Applications
- Embedded Systems: Ideal for use in embedded computing devices, where its high-speed parallel interface can manage intensive data operations, supporting robust, real-time processing.
- Automotive Applications: Used in advanced automotive infotainment systems, where large data capacity and fast access speeds are necessary to deliver enhanced user experiences.
- Industrial Automation: Serves as a critical component in industrial automation systems, facilitating data logging and process control tasks with its reliable storage capabilities.
- Consumer Electronics: Powers high-demand consumer electronics, such as digital cameras and portable media players, where durability and capacity are crucial for user satisfaction.
- Networking Equipment: Enhances performance in networking hardware, such as routers and switches, where speed and data integrity are key for managing large volumes of traffic efficiently.
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