NAND512R3A2BZA6E

Manufacturer :

STMicroelectronics

Product Category :

Memory

Standby Current-Max :

0.00005A

Command User Interface :

yes

Toggle Bit :

No

Memory Format :

Flash

Memory Interface :

Parallel

Voltage - Supply :

1.7V~1.95V

Page Size :

512words

Sector Size :

16k

Memory Density :

536870912 bit

Number of Functions :

1

Qualification Status :

Not Qualified

Number of Terminations :

63

Length :

11mm

Programming Voltage :

1.8V

Pin Count :

63

Terminal Position :

BOTTOM

Supply Voltage-Max (Vsup) :

1.95V

Data Bus Width :

8B

Organization :

64MX8

Mounting Type :

Surface Mount

Number of Sectors/Size :

4k

HTS Code :

8542.32.00.51

RoHS Status :

ROHS3 Compliant

Memory Width :

8

Ready/Busy :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Supply Voltage-Min (Vsup) :

1.7V

Package / Case :

63-VFBGA

Operating Temperature :

-40°C~85°C TA

Supply Current-Max :

0.015mA

Operating Mode :

ASYNCHRONOUS

ECCN Code :

3A991.B.1.A

Surface Mount :

yes

Power Supplies :

1.8V

Data Polling :

No

Memory Type :

Non-Volatile

Number of Pins :

55

Access Time (Max) :

15000 ns

Terminal Pitch :

0.8mm

Packaging :

Tray

Memory Size :

512Mb 64M x 8

Base Part Number :

NAND512

Write Cycle Time - Word, Page :

60ns

Height Seated (Max) :

1.05mm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Supply Voltage :

1.8V

JESD-30 Code :

R-PBGA-B63