NAND256W3A2BNXE
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- Mfr.Part #
- NAND256W3A2BNXE
- Manufacturer
- Micron Technology
- Package / Case
- 48-TFSOP (0.724, 18.40mm Width)
- Datasheet
- Download
- Description
- IC FLASH 256MBIT PARALLEL 48TSOP
- Stock
- 32,070
- In Stock ：
- 32,070
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Number of Terminations :
- 48
- Standby Current-Max :
- 0.00005A
- Density :
- 256 Mb
- Sector Size :
- 16k
- Mounting Type :
- Surface Mount
- Package / Case :
- 48-TFSOP (0.724, 18.40mm Width)
- JESD-609 Code :
- e3
- Voltage :
- 3.3V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Operating Temperature :
- -40°C~85°C TA
- Mount :
- Surface Mount
- Voltage - Supply :
- 2.7V~3.6V
- Voltage - Rated DC :
- 3.3V
- Base Part Number :
- NAND256
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Memory Interface :
- Parallel
- Terminal Pitch :
- 0.5mm
- Word Size :
- 8B
- Page Size :
- 528B
- Terminal Finish :
- MATTE TIN
- Number of Functions :
- 1
- Memory Type :
- Non-Volatile
- Factory Lead Time :
- 4 Weeks
- Sync/Async :
- ASYNCHRONOUS
- Nominal Supply Current :
- 20mA
- Packaging :
- Tray
- Number of Sectors/Size :
- 2k
- Memory Width :
- 8
- Toggle Bit :
- No
- RoHS Status :
- ROHS3 Compliant
- Ready/Busy :
- yes
- Memory Format :
- Flash
- Published :
- 2012
- Memory Size :
- 256Mb 32M x 8
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Operating Supply Voltage :
- 3V
- Data Polling :
- No
- Access Time (Max) :
- 45 ns
- Supply Voltage :
- 3V
- Number of Pins :
- 48
- Length :
- 18.4mm
- Write Cycle Time - Word, Page :
- 50ns
- Command User Interface :
- yes
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Organization :
- 32MX8
- Address Bus Width :
- 25b
- Height Seated (Max) :
- 1.2mm
- Datasheets
- NAND256W3A2BNXE
NAND256W3A2BNXE Documents
Memory Micron Technology NAND256W3A2BNXE Overview
Introducing the Memory Micron Technology NAND256W3A2BNXE, a high-performance IC FLASH memory device designed to meet the rigorous demands of high-capacity storage systems. This component offers a substantial 256Mbit storage capability, encapsulated in a reliable 48TSOP package. Ideal for applications requiring fast and reliable non-volatile memory, the NAND256W3A2BNXE by Micron Technology stands out for its durability and efficiency, making it a preferred choice for developers and manufacturers aiming for superior storage solutions. The integration of advanced manufacturing technology ensures this chip delivers consistent performance, enhancing the overall efficiency of electronic devices.
NAND256W3A2BNXE Features
The NAND256W3A2BNXE features a parallel interface, which provides greater speed and reliability in data transfer. Its 256Mbit capacity allows for ample storage of critical data. Manufactured in a 48TSOP package, it ensures robustness and ease of integration into various circuit boards. The flash memory type used is designed for excellent endurance and stability under a wide range of environmental conditions, making it a versatile choice for many industrial applications.
NAND256W3A2BNXE Applications
- Embedded Systems: Utilized in sophisticated embedded systems, the NAND256W3A2BNXE provides the necessary data retention and quick access required for efficient operation and reliability.
- Consumer Electronics: Essential for devices such as digital cameras, audio players, and gaming consoles, where large amounts of data storage and integrity are critical.
- Mobile Devices: Supports the high storage demands of mobile phones and tablets, ensuring smooth performance and durability.
- Automotive Applications: Relied upon in automotive electronics for navigation systems and infotainment, where long-lasting and dependable storage is crucial.
- Internet of Things (IoT) Devices: Plays a pivotal role in IoT devices, enabling efficient data management and high-speed operations in smart home products and automation systems.
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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