NAND256W3A2BN6E
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- Mfr.Part #
- NAND256W3A2BN6E
- Manufacturer
- Micron Technology
- Package / Case
- 48-TFSOP (0.724, 18.40mm Width)
- Datasheet
- Download
- Description
- IC FLASH 256MBIT PARALLEL 48TSOP
- Stock
- 8,611
- In Stock ：
- 8,611
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Density :
- 256 Mb
- Memory Type :
- Non-Volatile
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Voltage :
- 3V
- Sector Size :
- 16k
- Radiation Hardening :
- No
- Package / Case :
- 48-TFSOP (0.724, 18.40mm Width)
- Number of Sectors/Size :
- 2k
- Height Seated (Max) :
- 1.2mm
- Address Bus Width :
- 25b
- Contact Plating :
- Gold, Tin
- Packaging :
- Tray
- Base Part Number :
- NAND256-A
- Voltage - Rated DC :
- 3V
- Data Polling :
- No
- Toggle Bit :
- No
- Access Time (Max) :
- 35 ns
- Termination :
- SMD/SMT
- REACH SVHC :
- No SVHC
- Ready/Busy :
- yes
- Pin Count :
- 48
- RoHS Status :
- ROHS3 Compliant
- HTS Code :
- 8542.32.00.51
- Pbfree Code :
- yes
- Number of Pins :
- 48
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Write Cycle Time - Word, Page :
- 50ns
- Length :
- 18.4mm
- Terminal Position :
- Dual
- ECCN Code :
- 3A991.B.1.A
- Organization :
- 32MX8
- Published :
- 2004
- Memory Format :
- Flash
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Pitch :
- 0.5mm
- Supply Voltage :
- 3V
- Memory Size :
- 256Mb 32M x 8
- Command User Interface :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Voltage - Supply :
- 2.7V~3.6V
- Sync/Async :
- ASYNCHRONOUS
- Page Size :
- 528B
- Number of Terminations :
- 48
- Operating Temperature :
- -40°C~85°C TA
- Peak Reflow Temperature (Cel) :
- 260
- Number of Functions :
- 1
- Word Size :
- 8B
- Nominal Supply Current :
- 20mA
- Memory Width :
- 8
- Standby Current-Max :
- 0.00005A
- JESD-609 Code :
- e3
- Memory Interface :
- Parallel
- Datasheets
- NAND256W3A2BN6E
Memory Micron Technology NAND256W3A2BN6E Overview
Discover the cutting-edge NAND256W3A2BN6E from Micron Technology, a leading name in integrated circuits. This IC FLASH 256MBIT Parallel 48TSOP offers unparalleled performance and reliability, making it the top choice for demanding applications.
With a focus on quality and innovation, Micron Technology has crafted the NAND256W3A2BN6E to meet the rigorous standards of modern electronics. Whether you're designing consumer electronics, industrial machinery, or automotive systems, this memory solution delivers the speed, capacity, and durability you need to stay ahead of the competition.
NAND256W3A2BN6E Features
- High-speed data transfer: The NAND256W3A2BN6E enables rapid read and write operations, ensuring efficient data processing in any application.
- Large storage capacity: With 256MBIT of storage space, this IC FLASH accommodates vast amounts of data, making it ideal for storing multimedia content, firmware, and operating systems.
- Parallel interface: The 48TSOP parallel interface facilitates seamless integration with a wide range of devices, simplifying system design and development.
- Robust construction: Built to withstand harsh operating conditions, including temperature fluctuations and mechanical stress, the NAND256W3A2BN6E ensures reliable performance in any environment.
NAND256W3A2BN6E Applications
- Consumer Electronics: From smartphones and tablets to digital cameras and gaming consoles, the NAND256W3A2BN6E powers the storage systems of the latest electronic devices, providing users with fast access to their data and media files.
- Industrial Machinery: In industrial automation and control systems, the NAND256W3A2BN6E serves as a reliable storage solution for storing program code, configuration data, and logged information, ensuring uninterrupted operation and efficient troubleshooting.
- Automotive Systems: Embedded in automotive infotainment systems, navigation units, and driver assistance systems, the NAND256W3A2BN6E enables quick boot times, smooth multimedia playback, and secure data storage, enhancing the driving experience and safety of passengers.
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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