NAND256W3A0BZA6E

Manufacturer :

Micron Technology

Product Category :

Memory

Radiation Hardening :

No

Pbfree Code :

yes

Memory Interface :

Parallel

Word Size :

8B

Operating Temperature :

-40°C~85°C TA

Published :

2013

Programming Voltage :

3V

Standby Current-Max :

0.00005A

Base Part Number :

NAND256-A

Number of Functions :

1

Organization :

32MX8

Peak Reflow Temperature (Cel) :

260

Write Cycle Time - Word, Page :

50ns

Number of Sectors/Size :

2k

Memory Format :

Flash

Memory Type :

Non-Volatile

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

HTS Code :

8542.32.00.51

Ready/Busy :

yes

Page Size :

512words

JESD-609 Code :

e1

Time@Peak Reflow Temperature-Max (s) :

30

Nominal Supply Current :

20mA

Supply Voltage-Max (Vsup) :

3.6V

Voltage - Supply :

2.7V~3.6V

Terminal Position :

BOTTOM

Pin Count :

55

Package / Case :

55-TFBGA

Mounting Type :

Surface Mount

Supply Voltage-Min (Vsup) :

2.7V

Number of Pins :

55

Height Seated (Max) :

1.05mm

Memory Size :

256Mb 32M x 8

ECCN Code :

3A991.B.1.A

RoHS Status :

ROHS3 Compliant

Power Supplies :

3/3.3V

Terminal Finish :

TIN SILVER COPPER

Sector Size :

16k

Toggle Bit :

No

Data Polling :

No

Density :

256 Mb

Sync/Async :

ASYNCHRONOUS

Terminal Pitch :

0.8mm

Supply Voltage :

3V

Packaging :

Tray

Memory Width :

8

Number of Terminations :

55

Address Bus Width :

25b

Access Time (Max) :

35 ns

Mount :

Surface Mount

Command User Interface :

yes

Length :

10mm