NAND256W3A0BZA6E
- Mfr.Part #
- NAND256W3A0BZA6E
- Manufacturer
- Micron Technology
- Package / Case
- 55-TFBGA
- Datasheet
- Download
- Description
- IC FLSH 256MBIT PARALLEL 55VFBGA
- Stock
- 40,027
- In Stock :
- 40,027
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Memory Format :
- Flash
- Standby Current-Max :
- 0.00005A
- Supply Voltage-Min (Vsup) :
- 2.7V
- Supply Voltage :
- 3V
- Base Part Number :
- NAND256-A
- Data Polling :
- No
- Access Time (Max) :
- 35 ns
- Memory Width :
- 8
- Memory Interface :
- Parallel
- Memory Type :
- Non-Volatile
- Number of Terminations :
- 55
- Mounting Type :
- Surface Mount
- Page Size :
- 512words
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -40°C~85°C TA
- Ready/Busy :
- yes
- HTS Code :
- 8542.32.00.51
- Number of Sectors/Size :
- 2k
- Number of Pins :
- 55
- Packaging :
- Tray
- Command User Interface :
- yes
- Number of Functions :
- 1
- Word Size :
- 8B
- Power Supplies :
- 3/3.3V
- Pin Count :
- 55
- Address Bus Width :
- 25b
- Terminal Finish :
- TIN SILVER COPPER
- Sync/Async :
- ASYNCHRONOUS
- Pbfree Code :
- yes
- Programming Voltage :
- 3V
- Package / Case :
- 55-TFBGA
- Supply Voltage-Max (Vsup) :
- 3.6V
- Terminal Position :
- BOTTOM
- Toggle Bit :
- No
- Nominal Supply Current :
- 20mA
- Mount :
- Surface Mount
- Sector Size :
- 16k
- ECCN Code :
- 3A991.B.1.A
- Published :
- 2013
- Organization :
- 32MX8
- Terminal Pitch :
- 0.8mm
- RoHS Status :
- ROHS3 Compliant
- Write Cycle Time - Word, Page :
- 50ns
- Voltage - Supply :
- 2.7V~3.6V
- Height Seated (Max) :
- 1.05mm
- JESD-609 Code :
- e1
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Length :
- 10mm
- Density :
- 256 Mb
- Memory Size :
- 256Mb 32M x 8
- Radiation Hardening :
- No
- Datasheets
- NAND256W3A0BZA6E

Memory Micron Technology NAND256W3A0BZA6E Overview
The Memory Micron Technology NAND256W3A0BZA6E represents a cutting-edge storage solution designed for applications that demand high reliability and speed. This 256 Mbit NAND flash memory comes in a compact 55-VFBGA package, optimized for efficient handling and integration into a variety of electronic systems. Manufactured by Micron Technology, a leader in memory and storage solutions, this component offers robust performance characteristics that meet the stringent requirements of modern industrial, computing, and consumer electronics. The parallel interface ensures compatibility with a broad range of microcontrollers and processors, making it an ideal choice for developers looking to streamline product design and enhance system reliability.
NAND256W3A0BZA6E Features
This IC flash memory module is equipped with several features that make it highly suitable for demanding applications. It supports a wide voltage range and offers a large storage capacity of 256 Mbits, enabling substantial data storage in a tiny footprint. The parallel interface facilitates fast data transfer rates, which is crucial for applications requiring quick read and write operations. Its robust design is tailored to withstand the rigors of intensive operational environments, ensuring long-term reliability and stability.
NAND256W3A0BZA6E Applications
- Consumer Electronics: Utilized in devices like digital cameras, MP3 players, and smart TVs for high-speed and reliable storage, enhancing device responsiveness and user experience.
- Automotive: Integrated into automotive infotainment systems, providing durable and efficient data storage solutions capable of withstanding harsh environments and temperature variations.
- Mobile Technology: Employs in smartphones and tablets to manage boot processes and store critical application data, supporting quick access and efficient operation.
- Industrial Applications: Used in industrial automation systems for logging data and firmware storage, where long-term reliability and data integrity are paramount.
- Networking: Serves in networking equipment like routers and switches for firmware storage, facilitating fast and reliable device operations.
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