NAND128W3AABN6E

Manufacturer :

Micron Technology

Product Category :

Memory

Memory Width :

8

Pbfree Code :

yes

Operating Temperature :

-40°C~85°C TA

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Memory Size :

128Mb 16M x 8

Voltage - Supply :

2.7V~3.6V

Number of Functions :

1

Memory Type :

Non-Volatile

Packaging :

Tray

Density :

128 Mb

ECCN Code :

3A991.B.1.A

Write Cycle Time - Word, Page :

50ns

Voltage - Rated DC :

3V

Supply Voltage :

3V

Organization :

16MX8

Number of Terminations :

48

Memory Interface :

Parallel

Height Seated (Max) :

1.2mm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ASYNCHRONOUS

Pin Count :

48

Terminal Pitch :

0.5mm

Package / Case :

48-TFSOP (0.724, 18.40mm Width)

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Memory Format :

Flash

Surface Mount :

yes

Length :

18.4mm

Published :

2012

Address Bus Width :

24b

Access Time (Max) :

35 ns

Mounting Type :

Surface Mount

Number of Pins :

48

Voltage :

3V

HTS Code :

8542.32.00.51