NAND128W3A0BN6E

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Mfr.Part #
NAND128W3A0BN6E
Manufacturer
Micron Technology
Package / Case
48-TFSOP (0.724, 18.40mm Width)
Datasheet
Download
Description
IC FLASH 128MBIT PARALLEL 48TSOP
Stock
4,273
In Stock :
4,273

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Manufacturer :
Micron Technology
Product Category :
Memory
Base Part Number :
NAND128-A
Package / Case :
48-TFSOP (0.724, 18.40mm Width)
Command User Interface :
yes
JESD-609 Code :
e3
Terminal Pitch :
0.5mm
Mounting Type :
Surface Mount
Published :
2004
Data Polling :
No
Mount :
Surface Mount
Organization :
16MX8
Terminal Finish :
MATTE TIN
Voltage :
3V
Ready/Busy :
yes
Memory Interface :
Parallel
Pin Count :
48
Write Cycle Time - Word, Page :
50ns
Number of Pins :
48
Radiation Hardening :
No
Number of Terminations :
48
Time@Peak Reflow Temperature-Max (s) :
30
Memory Type :
Non-Volatile
Toggle Bit :
No
Voltage - Supply :
2.7V~3.6V
Word Size :
8B
Density :
128 Mb
Memory Width :
8
Length :
18.4mm
Supply Voltage :
3V
Sector Size :
16k
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
HTS Code :
8542.32.00.51
Terminal Position :
Dual
Height Seated (Max) :
1.2mm
Number of Sectors/Size :
1k
Peak Reflow Temperature (Cel) :
260
Nominal Supply Current :
20mA
Packaging :
Tray
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Access Time (Max) :
35 ns
ECCN Code :
3A991.B.1.A
Page Size :
512words
Address Bus Width :
24b
Standby Current-Max :
0.00005A
Sync/Async :
ASYNCHRONOUS
Number of Functions :
1
Operating Temperature :
-40°C~85°C TA
Memory Format :
Flash
Voltage - Rated DC :
3V
Memory Size :
128Mb 16M x 8
Datasheets
NAND128W3A0BN6E
Introducing Memory Micron Technology NAND128W3A0BN6E from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:NAND128-A, Package / Case:48-TFSOP (0.724, 18.40mm Width), Mounting Type:Surface Mount, Voltage:3V, Number of Pins:48, Number of Terminations:48, Operating Temperature:-40°C~85°C TA, NAND128W3A0BN6E pinout, NAND128W3A0BN6E datasheet PDF, NAND128W3A0BN6E amp .Beyond Memory Micron Technology NAND128W3A0BN6E ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology NAND128W3A0BN6E


Memory Micron Technology NAND128W3A0BN6E Overview

Introducing the Memory Micron Technology NAND128W3A0BN6E, a state-of-the-art IC FLASH memory device that offers a robust 128Mbit storage capacity, tailored for high-demand applications. Manufactured by Micron Technology, this parallel 48TSOP IC FLASH memory is engineered to provide reliable, high-speed data storage and retrieval. The NAND128W3A0BN6E is designed to meet the rigorous requirements of modern electronic devices, ensuring both durability and performance. Its large storage capacity and efficiency make it an excellent choice for businesses looking to invest in top-tier memory solutions for their advanced systems.

NAND128W3A0BN6E Features

The NAND128W3A0BN6E IC FLASH by Micron Technology boasts several key features that make it stand out. It utilizes a parallel interface for high-speed data transfers and is packaged in a compact 48TSOP configuration that is suitable for streamlined board designs. Additionally, its 128Mbit capacity allows for substantial data storage without compromising the device’s performance or physical footprint. This makes it particularly useful for devices requiring high memory density within limited space.

NAND128W3A0BN6E Applications

  • Consumer Electronics: Used in devices like digital cameras and MP3 players, where high-capacity and fast-access storage is crucial.
  • Automotive Applications: Serves as reliable storage for embedded systems in automotive infotainment systems, where durability under extreme conditions is essential.
  • Communication Devices: Critical for mobile phones and tablets, ensuring swift operating system and application loading times.
  • Industrial Automation: Provides the memory required for control systems and automation technology, supporting complex processes and operational efficiency.
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