NAND128W3A0BN6E
- Mfr.Part #
- NAND128W3A0BN6E
- Manufacturer
- Micron Technology
- Package / Case
- 48-TFSOP (0.724, 18.40mm Width)
- Datasheet
- Download
- Description
- IC FLASH 128MBIT PARALLEL 48TSOP
- Stock
- 4,273
- In Stock :
- 4,273
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Base Part Number :
- NAND128-A
- Package / Case :
- 48-TFSOP (0.724, 18.40mm Width)
- Command User Interface :
- yes
- JESD-609 Code :
- e3
- Terminal Pitch :
- 0.5mm
- Mounting Type :
- Surface Mount
- Published :
- 2004
- Data Polling :
- No
- Mount :
- Surface Mount
- Organization :
- 16MX8
- Terminal Finish :
- MATTE TIN
- Voltage :
- 3V
- Ready/Busy :
- yes
- Memory Interface :
- Parallel
- Pin Count :
- 48
- Write Cycle Time - Word, Page :
- 50ns
- Number of Pins :
- 48
- Radiation Hardening :
- No
- Number of Terminations :
- 48
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Memory Type :
- Non-Volatile
- Toggle Bit :
- No
- Voltage - Supply :
- 2.7V~3.6V
- Word Size :
- 8B
- Density :
- 128 Mb
- Memory Width :
- 8
- Length :
- 18.4mm
- Supply Voltage :
- 3V
- Sector Size :
- 16k
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- HTS Code :
- 8542.32.00.51
- Terminal Position :
- Dual
- Height Seated (Max) :
- 1.2mm
- Number of Sectors/Size :
- 1k
- Peak Reflow Temperature (Cel) :
- 260
- Nominal Supply Current :
- 20mA
- Packaging :
- Tray
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Access Time (Max) :
- 35 ns
- ECCN Code :
- 3A991.B.1.A
- Page Size :
- 512words
- Address Bus Width :
- 24b
- Standby Current-Max :
- 0.00005A
- Sync/Async :
- ASYNCHRONOUS
- Number of Functions :
- 1
- Operating Temperature :
- -40°C~85°C TA
- Memory Format :
- Flash
- Voltage - Rated DC :
- 3V
- Memory Size :
- 128Mb 16M x 8
- Datasheets
- NAND128W3A0BN6E

Memory Micron Technology NAND128W3A0BN6E Overview
Introducing the Memory Micron Technology NAND128W3A0BN6E, a state-of-the-art IC FLASH memory device that offers a robust 128Mbit storage capacity, tailored for high-demand applications. Manufactured by Micron Technology, this parallel 48TSOP IC FLASH memory is engineered to provide reliable, high-speed data storage and retrieval. The NAND128W3A0BN6E is designed to meet the rigorous requirements of modern electronic devices, ensuring both durability and performance. Its large storage capacity and efficiency make it an excellent choice for businesses looking to invest in top-tier memory solutions for their advanced systems.
NAND128W3A0BN6E Features
The NAND128W3A0BN6E IC FLASH by Micron Technology boasts several key features that make it stand out. It utilizes a parallel interface for high-speed data transfers and is packaged in a compact 48TSOP configuration that is suitable for streamlined board designs. Additionally, its 128Mbit capacity allows for substantial data storage without compromising the device’s performance or physical footprint. This makes it particularly useful for devices requiring high memory density within limited space.
NAND128W3A0BN6E Applications
- Consumer Electronics: Used in devices like digital cameras and MP3 players, where high-capacity and fast-access storage is crucial.
- Automotive Applications: Serves as reliable storage for embedded systems in automotive infotainment systems, where durability under extreme conditions is essential.
- Communication Devices: Critical for mobile phones and tablets, ensuring swift operating system and application loading times.
- Industrial Automation: Provides the memory required for control systems and automation technology, supporting complex processes and operational efficiency.
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