NAND08GW3D2AN6E

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Mfr.Part #
NAND08GW3D2AN6E
Manufacturer
Micron Technology
Package / Case
48-TFSOP (0.724, 18.40mm Width)
Datasheet
Download
Description
IC FLASH 8GBIT PARALLEL 48TSOP
Stock
34,019
In Stock :
34,019

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Manufacturer :
Micron Technology
Product Category :
Memory
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Memory Interface :
Parallel
Address Bus Width :
31b
Memory Type :
Non-Volatile
RoHS Status :
ROHS3 Compliant
Nominal Supply Current :
30mA
Sync/Async :
ASYNCHRONOUS
Base Part Number :
NAND08G
Mounting Type :
Surface Mount
Memory Format :
Flash
Density :
8 GB
Package / Case :
48-TFSOP (0.724, 18.40mm Width)
Word Size :
8B
Voltage - Supply :
2.7V~3.6V
Reach Compliance Code :
Unknown
Mount :
Surface Mount
Interface :
Parallel, Serial
Number of Pins :
48
Published :
2009
Memory Size :
8Gb 1G x 8
Operating Temperature :
-40°C~85°C TA
Packaging :
Tray
Write Cycle Time - Word, Page :
25ns
Datasheets
NAND08GW3D2AN6E
Introducing Memory Micron Technology NAND08GW3D2AN6E from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:NAND08G, Mounting Type:Surface Mount, Package / Case:48-TFSOP (0.724, 18.40mm Width), Number of Pins:48, Operating Temperature:-40°C~85°C TA, NAND08GW3D2AN6E pinout, NAND08GW3D2AN6E datasheet PDF, NAND08GW3D2AN6E amp .Beyond Memory Micron Technology NAND08GW3D2AN6E ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology NAND08GW3D2AN6E


Memory Micron Technology NAND08GW3D2AN6E Overview

The Memory Micron Technology NAND08GW3D2AN6E is a high-capacity, parallel interface NAND flash memory device designed for robust performance in intensive data storage operations. With an impressive storage capacity of 8 Gbit housed in a compact 48TSOP package, this IC from Micron Technology is engineered to meet the rigorous demands of modern digital storage systems. The NAND08GW3D2AN6E is ideally suited for applications requiring large, non-volatile storage with reliability and speed, making it a preferred choice for enterprise-level solutions looking to leverage advanced memory technology for enhanced system capabilities.

NAND08GW3D2AN6E Features

The NAND08GW3D2AN6E flash memory chip stands out with its 8 Gbit storage capacity, allowing substantial data management and retention capabilities. Designed for parallel interface, it offers a balanced performance for read and write operations, critical for high-speed processing environments. Its 48TSOP package is optimized for efficient layout and durability, ensuring reliable integration into various hardware setups. The use of advanced manufacturing technologies by Micron Technology also guarantees low power consumption and minimal latency, enhancing the overall efficiency of the device.

NAND08GW3D2AN6E Applications

  • Digital Cameras: Utilized for storing high-resolution images and video, where large, fast memory is crucial for buffering and immediate data access.
  • Smartphones: Serves as extended storage for applications, media, and OS updates, enhancing device responsiveness and user experience.
  • Solid State Drives (SSDs): Employs multiple NAND08GW3D2AN6E chips for fast data transfer rates and robust data integrity in consumer and industrial computing devices.
  • Portable Media Players: Used for storing vast amounts of media content such as music and videos, allowing quick access and reliable playback.
  • Embedded Systems: Provides dependable storage solution for critical data in automotive applications, industrial control systems, and IoT devices, where longevity and durability are paramount.
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