NAND08GW3C2BN6E
- Mfr.Part #
- NAND08GW3C2BN6E
- Manufacturer
- Micron Technology
- Package / Case
- 48-TFSOP (0.724, 18.40mm Width)
- Datasheet
- Download
- Description
- IC FLASH 8GBIT PARALLEL 48TSOP
- Stock
- 36,405
- In Stock :
- 36,405
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Page Size :
- 2kB
- Terminal Position :
- Dual
- Base Part Number :
- NAND08G
- Sector Size :
- 256k
- Mount :
- Surface Mount
- Organization :
- 1GX8
- Package / Case :
- 48-TFSOP (0.724, 18.40mm Width)
- RoHS Status :
- ROHS3 Compliant
- Command User Interface :
- yes
- Mounting Type :
- Surface Mount
- Ready/Busy :
- yes
- Number of Pins :
- 48
- Data Polling :
- No
- Address Bus Width :
- 30b
- Number of Terminations :
- 48
- Published :
- 2009
- Terminal Pitch :
- 0.5mm
- Power Supplies :
- 3/3.3V
- Memory Size :
- 8Gb 1G x 8
- Memory Interface :
- Parallel
- Standby Current-Max :
- 0.00005A
- Density :
- 8 GB
- Sync/Async :
- ASYNCHRONOUS
- Packaging :
- Tray
- Word Size :
- 8B
- Toggle Bit :
- No
- Memory Type :
- Non-Volatile
- Nominal Supply Current :
- 30mA
- Number of Sectors/Size :
- 4k
- Memory Width :
- 8
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Radiation Hardening :
- No
- Write Cycle Time - Word, Page :
- 25ns
- Access Time (Max) :
- 20 ns
- Voltage - Supply :
- 2.7V~3.6V
- Memory Format :
- Flash
- Operating Temperature :
- -40°C~85°C TA
- Datasheets
- NAND08GW3C2BN6E

Memory Micron Technology NAND08GW3C2BN6E Overview
The Memory Micron Technology NAND08GW3C2BN6E is a high-capacity NAND Flash memory device, offering a robust storage solution designed to meet the demands of intensive data applications. This IC FLASH 8GBIT with a parallel interface packaged in a 48TSOP format is engineered by Micron Technology, a leader in memory and storage solutions. Its large storage capacity and reliability make it an ideal choice for developers and manufacturers looking to enhance their systems with fast, durable, and efficient memory components. Incorporating this memory into your designs ensures high performance and dependability, crucial for modern electronic systems.
NAND08GW3C2BN6E Features
This integrated circuit boasts 8 Gb of data storage capacity, suitable for applications requiring large non-volatile memory. The parallel interface provides higher throughput and lower latency compared to serial interfaces, making it a preferred choice for performance-sensitive applications. The 48TSOP package is recognized for its compact size and reliability, which aids in designing sleek and robust devices.
NAND08GW3C2BN6E Applications
- Digital Cameras: Utilizes its high storage capacity for storing high-resolution images and videos efficiently.
- Portable Media Players: Employs this NAND Flash memory to store large volumes of media files, allowing for quick access and smooth playback.
- GPS Devices: Relies on the durable and reliable nature of the NAND08GW3C2BN6E to handle frequent write and erase cycles required for map data storage.
- Automotive Infotainment Systems: Takes advantage of the memory's capacity and speed to deliver fast loading times and efficient data handling for in-car entertainment and information services.
- Smartphones and Tablets: Makes use of the efficient storage solution to enhance device performance and user experience by enabling faster access to applications and media.
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