NAND04GR3B2DN6E
- Mfr.Part #
- NAND04GR3B2DN6E
- Manufacturer
- Micron Technology
- Package / Case
- 48-TFSOP (0.724, 18.40mm Width)
- Datasheet
- Download
- Description
- IC FLASH 4GBIT PARALLEL 48TSOP
- Stock
- 15,211
- In Stock :
- 15,211
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pin Count :
- 48
- Published :
- 2010
- Memory Type :
- Non-Volatile
- Standby Current-Max :
- 0.00005A
- JESD-609 Code :
- e3
- Package / Case :
- 48-TFSOP (0.724, 18.40mm Width)
- Sync/Async :
- ASYNCHRONOUS
- Supply Voltage :
- 1.8V
- Memory Format :
- Flash
- Number of Pins :
- 48
- Page Size :
- 2Kwords
- Number of Functions :
- 1
- Data Polling :
- No
- Qualification Status :
- Not Qualified
- Supply Voltage-Min (Vsup) :
- 1.7V
- Mounting Type :
- Surface Mount
- Memory Interface :
- Parallel
- Number of Sectors/Size :
- 4k
- Terminal Position :
- Dual
- Base Part Number :
- NAND04G
- Pbfree Code :
- yes
- Write Cycle Time - Word, Page :
- 25ns
- Packaging :
- Tray
- Access Time (Max) :
- 25000 ns
- Operating Supply Voltage :
- 1.8V
- Number of Terminations :
- 48
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Matte Tin (Sn)
- Organization :
- 512MX8
- Height Seated (Max) :
- 1.2mm
- Mount :
- Surface Mount
- Command User Interface :
- yes
- Length :
- 18.4mm
- Word Size :
- 16b
- RoHS Status :
- ROHS3 Compliant
- Voltage - Supply :
- 1.7V~1.95V
- Supply Voltage-Max (Vsup) :
- 1.95V
- Terminal Pitch :
- 0.5mm
- Ready/Busy :
- yes
- Address Bus Width :
- 1b
- Density :
- 4 GB
- Toggle Bit :
- No
- Nominal Supply Current :
- 20mA
- Sector Size :
- 128K
- Memory Size :
- 4Gb 512M x 8
- Memory Width :
- 8
- Operating Temperature :
- -40°C~85°C TA
- Datasheets
- NAND04GR3B2DN6E

Memory Micron Technology NAND04GR3B2DN6E Overview
Introducing the Memory Micron Technology NAND04GR3B2DN6E, a high-capacity 4Gbit NAND flash memory IC, packaged in a compact 48TSOP form factor. This advanced storage solution from Micron Technology is engineered to meet the rigorous demands of modern electronic devices, offering a blend of performance, reliability, and scalability. Its large storage capacity and fast parallel interface make it an ideal choice for applications requiring extensive data storage and swift data access. This IC is tailored to enhance the efficiency and performance of your high-volume data storage systems, making it a valuable asset for businesses aiming to leverage technology for competitive advantage.
NAND04GR3B2DN6E Features
The NAND04GR3B2DN6E flash memory IC boasts several key features that distinguish it from competitors. It provides a robust 4Gbit data storage capacity, ensuring ample space for large-scale applications. The parallel interface enhances data transfer speeds, facilitating faster read and write operations, crucial for performance-critical applications. Additionally, its 48TSOP package is designed for optimal integration into various device architectures, offering versatility and ease of installation.
NAND04GR3B2DN6E Applications
- Digital Cameras: Utilized for storing high-resolution images and videos, where fast and reliable storage is paramount.
- Portable Media Players: Provides the necessary storage capacity to house large multimedia files, enabling enhanced user experiences on the go.
- GPS Devices: Employs its high storage capability to accommodate extensive map data and software updates, essential for navigation accuracy.
- Automotive Infotainment Systems: Used in the storage of multimedia content, system updates, and user data, supporting advanced functionality in vehicle entertainment and information systems.
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